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Pronounced electromigration of Cu in molten Sn-based solders

Published online by Cambridge University Press:  31 January 2011

J.R. Huang
Affiliation:
Department of Chemical & Materials Engineering, National Central University, Jhongli City, Taiwan
C.M. Tsai
Affiliation:
Department of Chemical & Materials Engineering, National Central University, Jhongli City, Taiwan
Y.W. Lin
Affiliation:
Department of Materials Science & Engineering, National Taiwan University, Taipei City 106, Taiwan
C.R. Kao*
Affiliation:
Department of Materials Science & Engineering, National Taiwan University, Taipei City 106, Taiwan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The high local temperature in flip-chip solder joints of microprocessors has raised concerns that the solder, a low melting temperature alloy, might locally liquefy and consequently cause failure of the microprocessors. This article reports a highly interesting electromigration behavior when the solder is in the molten state. A 6.3 × 103 A/cm2 electron current was applied to molten Sn3.5Ag solder at 255 °C through two Cu electrodes. The high current density caused rapid dissolution of the Cu cathode. The dissolved Cu atoms were driven by electrons to the anode side and precipitated out as a thick, and sometimes continuous, layer of Cu6Sn5. The applied current caused the dissolution rate of the Cu cathode to increase by one order of magnitude. A major difference between the electromigration in the solid and molten state was identified to be the presence of different countering fluxes in response to electromigration. For electromigration in the molten state, the back-stress flux, which was operative for electromigration in the solid state, was missing, and instead a countering flux due to the chemical potential gradient was present. An equation for the chemical potential gradient, dμ/dx, required to balance the electromigration flux was derived to be dμ/dx = N°z*eρJ, where N° is Avogadro’s number, z* is the effective charge of Cu, e is the charge of an electron, ρ is the resistivity of the solder, and J is the electron current density.

Type
Articles
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Tu, K.N.: Recent advances on electromigration in very-large-scale integration of interconnects. J. Appl. Phys. 94, 5451 2003CrossRefGoogle Scholar
2Nah, J.W., Suh, J.O.Tu, K.N.: Effect of current crowding and joule heating on electromigration induced failure in flip chip composite solder joints tested at room temperature. J. Appl. Phys. 98, 013715 2005CrossRefGoogle Scholar
3Zhang, L., Ou, S., Huang, J., Tu, K.N., Gee, S.Nguyen, L.: Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints. Appl. Phys. Lett. 88, 012106 2006CrossRefGoogle Scholar
4Lin, Y.H., Hu, Y.C., Tsai, C.M., Kao, C.R.Tu, K.N.: In-situ observation of the void formation and propagation mechanism in solder joints under current stressing. Acta Mater. 53, 2029 2005CrossRefGoogle Scholar
5Tsai, C.M., Lin, Y.L., Tsai, J.Y., Lai, Y.S.Kao, C.R.: Local melting induced by electromigration in flip-chip solder joints. J. Electron Mater. 35, 1005 2006CrossRefGoogle Scholar
6Alam, M.O., Wu, B.Y., Chan, Y.C.Tu, K.N.: High electric current density induced interfacial reactions in the micro-ball grid array (μBGA) solder joint. Acta Mater. 54, 613 2006CrossRefGoogle Scholar
7Lin, Y.H., Tsai, C.M., Hu, Y.C., Lin, Y.L.Kao, C.R.: Electromigration induced failure in flip-chip solder joints. J. Electron Mater. 34, 27 2005CrossRefGoogle Scholar
8Hu, Y.C., Lin, Y.H.Kao, C.R.: Electromigration failure in flip-chip solder joints due to rapid dissolution of copper. J. Mater. Res. 18, 2544 2003CrossRefGoogle Scholar
9Lin, Y.H., Tsai, C.M., Lin, Y.L., Tsai, J.Y.Kao, C.R.: Electromigration induced metal dissolution in flip-chip solder joints. Mater. Sci. Forum 475–479, 2655 2005CrossRefGoogle Scholar
10Lu, H.Y., Balkan, H.Ng, K.Y.S.: Solid–liquid reactions: The effect of Cu content on Sn–Ag–Cu interconnects. JOM 57, 30 2005CrossRefGoogle Scholar
11Laurila, T., Vuorinen, V.Kivilahti, J.K.: Interfacial reactions between lead-free solders and common base materials. Mater. Sci. Eng., R 49, 1 2005CrossRefGoogle Scholar
12Hayashi, A., Kao, C.R.Chang, Y.A.: Reactions of solid copper with pure liquid tin and liquid tin saturated with copper. Scripta Mater. 37, 393 1997CrossRefGoogle Scholar
13Gan, H.Tu, K.N.: Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder v-groove samples. J. Appl. Phys. 97, 063514 2005CrossRefGoogle Scholar
14Dybkov, V.I.: Growth Kinetics of Chemical Compound Layers Cambridge International Science Cambridge 1998 135Google Scholar
15Huang, M.L., Loeher, T., Ostmann, A.Reichl, H.: Role of Cu in dissolution kinetics of Cu metallization in molten Sn-based solders. Appl. Phys. Lett. 86, 181908 2005CrossRefGoogle Scholar
16Alloy phase diagrams, in ASM Handbook, Vol. 3 edited by H. Baker ASM International Materials Park, OH 1992 2–178.Google Scholar