Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-26T22:44:16.598Z Has data issue: false hasContentIssue false
  • English
  • Français

Production of aluminum nitride from aluminum metal using molten fluoride

Published online by Cambridge University Press:  12 February 2015

Osamu Takeda ,
Konosuke Takagi ,
Takeshi Handa ,
Kiwamu Katagiri ,
Hongmin Zhu  and
Yuzuru Sato
Osamu Takeda*
Affiliation:
Department Metallurgy, Graduate School of Engineering, Tohoku University, Aoba-ku, Sendai 980-8579, Japan
Konosuke Takagi
Affiliation:
Department Metallurgy, Graduate School of Engineering, Tohoku University, Aoba-ku, Sendai 980-8579, Japan
Takeshi Handa
Affiliation:
Department Metallurgy, Graduate School of Engineering, Tohoku University, Aoba-ku, Sendai 980-8579, Japan
Kiwamu Katagiri
Affiliation:
Department Metallurgy, Graduate School of Engineering, Tohoku University, Aoba-ku, Sendai 980-8579, Japan
Hongmin Zhu
Affiliation:
Department Metallurgy, Graduate School of Engineering, Tohoku University, Aoba-ku, Sendai 980-8579, Japan
Yuzuru Sato
Affiliation:
Department Metallurgy, Graduate School of Engineering, Tohoku University, Aoba-ku, Sendai 980-8579, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

The production of aluminum nitride (AlN) from aluminum metal was investigated in this study. The nitridation of Al (in rod, powder, and thin-plate forms) was facilitated by dissolving the Al2O3 thin films formed on the Al samples with a molten fluoride mixture (KF–45 mol% AlF3, KF, or LiF–50 mol% KF). AlN was formed when NH3 gas was supplied to the Al sample (in both solid and liquid forms) wetted by molten fluoride mixture. The lowest temperature at which AlN was successfully produced was 773 K. No AlN was formed when N2 or H2–25% N2 gas was supplied to the Al sample, even when a molten fluoride mixture was used. The reaction rate for the nitridation of Al powder increased with the temperature and reached 99% after 3 h at 1173 K. AlN thin films of 2–5 μm thickness were formed on Al thin plates (0.075–1.0 mm thick) at 873 K.

Keywords

Alnitridechemical reaction
Type
Articles
Information
Journal of Materials Research , Volume 30 , Issue 5 , 14 March 2015 , pp. 635 - 644
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Taniyasu, Y., Kasu, M., and Makimoto, T.: An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature 441, 325 (2006).Google Scholar
Makarov, Y.N., Avdeev, O.V., Barash, I.S., Bazarevskiy, D.S., Chemekova, T.Y., Mokhov, E.N., Nagalyuk, S.S., Roenkov, A.D., Segal, A.S., Vodakov, Y.A., Ramm, M.G., Davis, S., Huminic, G., and Helava, H.: Experimental and theoretical analysis of sublimation growth of AlN bulk crystals. J. Cryst. Growth 310, 881 (2008).Google Scholar
Hartmann, C., Wollweber, J., Seitz, C., Albrecht, M., and Fornari, R.: Homoepitaxial seeding and growth of bulk AlN by sublimation. J. Cryst. Growth 310, 930 (2008).CrossRefGoogle Scholar
Sumathi, R.R., Barz, R.U., Gille, P., and Straubinger, T.: Influence of interface formation on the structural quality of AlN single crystals grown by sublimation method. Phys. Status Solidi C 8, 2107 (2011).Google Scholar
Eriguchi, K., Hiratsuka, T., Murakami, H., Kumagai, Y., and Koukitu, A.: High-temperature growth of thick AlN layers on sapphire (0 0 01) substrates by solid source halide vapor-phase epitaxy. J. Cryst. Growth 310, 4016 (2008).Google Scholar
Nagashima, T., Harada, M., Yanagi, H., Kumagai, Y., Koukitsu, A., and Takeda, K.: High-speed epitaxial growth of AlN above 1200 °C by hydride vapor phase epitaxy. J. Cryst. Growth 300, 42 (2007).Google Scholar
Wakigawa, T., Nagano, T., Kangawa, Y., and Kakimoto, K.: Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy. J. Cryst. Growth 310, 2827 (2008).Google Scholar
Fukuyama, H., Kusunoki, S., Hakomori, A., and Hiraga, K.: Single crystalline aluminum nitride films fabricated by nitriding α-Al2O3 . J. Appl. Phys. 100, 024905 (2006).Google Scholar
Fukuyama, H., Nakamura, K., Aikawa, T., Kobatake, H., Hakomori, A., Takada, K., and Hiraga, K.: Nitridation behavior of sapphire using a carbon-saturated N2–CO gas mixture. J. Appl. Phys. 107, 043502 (2010).Google Scholar
Kangawa, Y., Toki, R., Yayama, T., Epelbaum, B.M., and Kakimoto, K.: Novel solution growth method of bulk AlN using Al and Li3N solid sources. Appl. Phys. Exp. 4, 095501 (2011).Google Scholar
Adachi, M., Tsuda, K., Sugiyama, M., Iida, J., Tanaka, A., and Fukuyama, H.: High-quality AlN layer homoepitaxially grown on nitrided a-plane sapphire using a Ga–Al flux. Appl. Phys. Exp. 6, 091001 (2013).Google Scholar
Predel, B.: Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology, Group IV, Sub. Vol. 5, Phase Equilibria, Crystallographic and Thermodynamic Data of Binary Alloys, Madelung, H.O. ed.; Springer: Berlin, 1991; p. 208.Google Scholar
Kameshima, Y., Irie, M., Yasumori, A., and Okada, K.: Mechanochemical effect on low temperature synthesis of AlN by direct nitridation method. Solid State Ionics 172, 185 (2004).CrossRefGoogle Scholar
Scholz, H. and Greil, P.: Synthesis of high purity AlN by nitridation of Li-doped Al-melt. J. Eur. Ceram. Soc. 6, 237 (1990).CrossRefGoogle Scholar
Scholz, H. and Greil, P.: Nitridation reactions of molten Al-(Mg, Si) alloys. J. Mater. Sci. 26, 669 (1991).Google Scholar
Haibo, J., Chen, K., Heping, Z., Agathopoulos, S., Fabrichnaya, O., and Ferreira, J.M.F.: Direct nitridation of molten Al(Mg,Si) alloy to AlN. J. Cryst. Growth 281, 639 (2005).Google Scholar
Komeya, K., Matsukaze, N., and Meguro, T.: Synthesis of AlN by direct nitridation of Al alloys. J. Ceram. Soc. Jpn. 101, 1319 (1993).Google Scholar
Kimura, A., Kondoh, K., and Watanabe, R.: In-situ directly nitrided and sintered Al-AlN composite material. J. Jpn. Soc. Powder Powder Metall. 49, 1042 (2002).CrossRefGoogle Scholar
Kondoh, K., Kimura, A., and Watanabe, R.: Cavitation toughness of in situ nitrided Al-AlN composite sintered material. Powder Metall. 44, 157 (2001).Google Scholar
Hall, B.J., Schaffer, G.B., Ning, Z., Mcphee, W.A.G., and Miller, D.N.: Al/AlN layered composites by direct nitridation of aluminum. J. Mater. Sci. Lett. 22, 1627 (2003).Google Scholar
Kent, D., Schaffer, G.B., Sercombe, T.B., and Drennan, J.: A novel method for the production of aluminum nitride. Scr. Mater. 54, 2125 (2006).Google Scholar
Kent, D., Drennan, J., and Schaffer, G.B.: A morphological study of nitride formed on Al at low temperature in the presence of Mg. Acta Mater. 59, 2469 (2011).CrossRefGoogle Scholar
Okada, T., Toriyama, M., and Kanzaki, S.: Synthesis of aluminum nitride sintered bodies using the direct nitridation of Al compacts. J. Eur. Ceramic Soc. 20, 783 (2000).CrossRefGoogle Scholar
Barin, I.: Thermochemical Data of Pure Substances (VCH Verlagsgesellschaft mbH, Weinheim, Germany, 1989).Google Scholar
Robert, E., Olsen, J.E., Danek, V., Tixhon, E., Ostvold, T., and Gilbert, B.: Structure and thermodynamics of alkali fluoride–aluminum fluoride–alumina melts. Vapor pressure, solubility, and Raman spectroscopic studies. J. Phys. Chem. B 101, 9447 (1997).Google Scholar
Phillips, B., Warshaw, C.M., and Mockrin, I.: Equilibria in KAlF4-containing systems. J. Am. Ceram. Soc. 49, 631 (1966).CrossRefGoogle Scholar
Sato, Y.: Fundamentals of Molten Salt Thermal Technology (AGNE Gijutsu Center, Tokyo, 1993); p. 265.Google Scholar
Sangster, J.M. and Pelton, A.D.: Phase diagrams and thermodynamic properties of the 70 binary alkali halide systems having common ions. J. Phys. Chem. Ref. Data 16, 509 (1987).Google Scholar
Inman, D., Legey, J.C., and Spencer, R.: A potentiometric study of alumina solubility and the influence of complexing by fluoride ions in LiCl-KCl. J. Appl. Electrochem. 8, 273 (1978).Google Scholar