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Preparation of ZnO by a nearby vaporizing chemical vapor deposition method

Published online by Cambridge University Press:  31 January 2011

Junichi Nishino  and
Yoshio Nosaka
Junichi Nishino
Affiliation:
Nagaoka University of Technology, Department of Chemistry, 1603–1 Kamitomioka-machi, Nagaoka-shi, Niigata 940–2188, Japan
Yoshio Nosaka
Affiliation:
Nagaoka University of Technology, Department of Chemistry, 1603–1 Kamitomioka-machi, Nagaoka-shi, Niigata 940–2188, Japan
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Abstract

Zinc oxide (ZnO) films were prepared by a nearby vaporizing chemical vapor deposition method using bis(2,4-pentanedionato)zinc as a source material. The deposition rate increased exponentially from 0.58 to 147 nm min−1 with increasing substrate temperature (Ts). The highest preferred orientation to the c axis was obtained under the conditions that the distance between substrate and source surface was 5.0 mm, and the Ts was 300 °C. When we used a sapphire (0001) substrate, an epitaxial ZnO film could be deposited on this condition.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 18 , Issue 9 , September 2003 , pp. 2029 - 2032
Copyright
Copyright © Materials Research Society 2003

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References

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