Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-16T19:24:38.007Z Has data issue: false hasContentIssue false

Preparation of semiconductive SrTiO3 thin films by metal-organic chemical vapor deposition and their electrical properties

Published online by Cambridge University Press:  31 January 2011

Daisuk Nagano
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo 152, Japan
Hiroshi Funakubo
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo 152, Japan
Osamu Sakurai
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo 152, Japan
Kazuo Shinozaki
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo 152, Japan
Nobuyasu Mizutani
Affiliation:
Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama Meguro-ku, Tokyo 152, Japan
Get access

Abstract

Insulating epitaxially grown SrTiO3 thin films were prepared on (100)MgO substrates by metal-organic chemical vapor deposition (MOCVD). Semiconductive SrTiO3 thin films were obtained by the rapid cooling after reheating in reduction atmosphere. The microstructure, crystal structure, and electrical properties of these films were investigated. The electrical properties varied by the composition of films and heat-treatment conditions, i.e., the heating temperature, the oxygen partial pressure, and the cooling rate after the annealing. Change of the resistivity of the film was attributed to that of the carrier concentration. Mobility of films was unchanged, and the value was almost the same order of that of bulks. The lowest resistivity of 0.1 Ω·cm was obtained when a sample of Ti/Sr = 1.0 was heated at 1200 °C under 10−15 Pa of PO2 and then rapidly cooled. This value is similar to that of bulks (100 –10−1 Ω · cm).

Type
Articles
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Linz, A., Jr., Phys. Rev. 91, 753 (1953).CrossRefGoogle Scholar
2.Sawaguchi, E., Kikuchi, A., and Kodera, Y., J. Phys. Soc. Jpn. 17, 1666 (1962).CrossRefGoogle Scholar
3.Waser, R., Solid State Ionics 75, 89 (1995).CrossRefGoogle Scholar
4.Uehara, M. and Tanahashi, M., J. Ceram. Soc. Jpn. Int. Ed. 99, 1080 (1991).CrossRefGoogle Scholar
5.Ichinose, N., Nakano, Y., and Takahashi, T., Key Engineering Mater. 53–55, 70 (1991).CrossRefGoogle Scholar
6.Takada, T., Kanada, O., and Takao, S., J. Ceram. Soc. Jpn. 103 (3), 251 (1995).CrossRefGoogle Scholar
7.Nam, S-H. and Kim, H-G., J. Appl. Phys. 72 (7), 2895 (1992).CrossRefGoogle Scholar
8.Iwabuchi, M., Kinoshita, K., Ishibashi, H., and Kobayashi, T., Jpn. J. Appl. Phys. 33 (2–4B), 610 (1994).CrossRefGoogle Scholar
9.Roy, D., Peng, C. J., and Krupanidhi, S. B., Appl. Phys. Lett. 60 (20), 2478 (1992).CrossRefGoogle Scholar
10.Yamaguchi, H., Lesaicherre, P-Y., Sakuma, T., Miyasaka, Y., Ishitani, A., and Yoshida, M., Jpn. J. Appl. Phys. 32 (9B), 4060 (1993).Google Scholar
11.Gerblinger, J. and Miexner, H., J. Appl. Phys. 67 (12), 7453 (1990).CrossRefGoogle Scholar
12.Gerblinger, J. and Meixner, H., Sensors and Actuators B 4, 99 (1991).CrossRefGoogle Scholar
13.Gerblinger, J., Lampe, U., Meixner, H., Perczel, I. V., and Giber, J., Sensors and Actuators B 18–19, 529 (1994).CrossRefGoogle Scholar
14.Hioki, T., Funakubo, H., Sakurai, O., Shinozaki, K., and Mizutani, N., J. Ceram. Soc. Jpn. 104 (1), 75 (1996).CrossRefGoogle Scholar
15.Funakubo, H., Inagaki, Y., Shinozaki, K., and Mizutani, N., J. CVD. 1, 73 (1992).Google Scholar
16.Kimura, T., Yamaguchi, H., Machida, H., Kokubun, H., and Yamada, M., Jpn. J. Appl. Phys. 33, 5119 (1994).CrossRefGoogle Scholar
17.Levin, E. M., Robbins, R., and Mcmurdie, H. F., Am. Ceram. Soc. 1, 119 (1964).Google Scholar
18.Perluzzo, G. and Destry, J., Can. J. Phys. 56, 453 (1978).CrossRefGoogle Scholar
19.Perluzzo, G. and Destry, J., Can. J. Phys. 54, 1482 (1976).CrossRefGoogle Scholar
20.Kittel, C., in Introduction to Solid State Physics (John Wiley & Sons, Inc., New York, 1996), p. 220.Google Scholar
21.Yamada, H. and Miller, G. R., J. Solid State Chem. 6, 169 (1973).CrossRefGoogle Scholar