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Preparation of highly oriented polycrystalline AlN thin films deposited on glass at oblique-angle incidence

Published online by Cambridge University Press:  31 January 2011

A. Rodríguez-Navarro ,
W. Otañno-Rivera ,
J. M. García-Ruiz ,
R. Messier  and
L. J. Pilione
A. Rodríguez-Navarro
Affiliation:
Instituto Andaluz de Ciencias de la Tierra-CSIC, Campus de Fuentenueva, 18002 Granada, Spain
W. Otañno-Rivera
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
J. M. García-Ruiz
Affiliation:
Instituto Andaluz de Ciencias de la Tierra-CSIC, Campus de Fuentenueva, 18002 Granada, Spain
R. Messier
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
L. J. Pilione
Affiliation:
Materials Research Lab., The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

A new method to prepare polycrystalline AlN thin films biaxially oriented on amorphous substrates has been demonstrated. The films were deposited at different angles of incidence with a rf sputtering system. Population-1 crystallites, oriented with their c-axis pointing toward the incoming flux with random orientation in aximuthal directions, predominate at low angle of incidence (near normal). Population-2 crystallites result from non-normal incidence and have their c-axis tilted away from the incoming flux and predominate at high, near glancing, angle of incidence. The alignment of crystallites (population-2) increases with angle of incidence. Crystallites align along the [11*0] channeling direction, characterized by a low sputtering yield, while misoriented crystal grains suffer a higher resputtering and their growth is inhibited. For films deposited at 75°, the FWHM of an x-ray ϕ scan profile is 25°, indicating a high in-plane alignment.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 7 , July 1997 , pp. 1689 - 1692
Copyright
Copyright © Materials Research Society 1997

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References

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