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Preparation and microstructural characteristics of solar-grade multicrystalline silicon by directional solidification in an axial magnetic field

Published online by Cambridge University Press:  22 November 2019

Xiao-Hui Chen*
Affiliation:
School of Mechanical and Electrical Engineering, Xinyu University, Xinyu 338004, People’s Republic of China; and Key Laboratory of University in Jiangxi for Silicon Materials, Xinyu 338004, People’s Republic of China
Senlin Rao
Affiliation:
School of New Energy Science and Engineering, Xinyu University, Xinyu 338004, People’s Republic of China; and Key Laboratory of University in Jiangxi for Silicon Materials, Xinyu 338004, People’s Republic of China
Fayun Zhang*
Affiliation:
School of New Energy Science and Engineering, Xinyu University, Xinyu 338004, People’s Republic of China; and Key Laboratory of University in Jiangxi for Silicon Materials, Xinyu 338004, People’s Republic of China
*
a)Address all correspondence to these authors. e-mail: [email protected]
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Abstract

Solar-grade multicrystalline silicon ingots as raw material for solar cells were obtained from upgraded metallurgical silicon by directional solidification in an axial magnetic field. The influence of preparation technology on the microstructural characteristics of silicon ingots was investigated. Governing equations were used to simulate the silicon fluid flow and thermal fields during directional solidification. The results show that appropriately increasing melt temperature and/or decreasing pulling-down rate can be conductive to the growth of a coarse columnar grain. Meanwhile, the axial magnetic field promotes the formation of low-energy ∑3 twin boundaries and reduces the dislocations and impurities, where the total concentration of major metal impurities is with a mean of 0.459 ppmw in the range of 1/9 to 8/9 of height along the growth direction. It is shown from the simulation results that suppressing silicon melt flow in both radial and azimuthal directions and reducing the growth rate in the edge regions contribute to the formation of a flat solid–liquid interface, which is more consistent with the experimental results. Moreover, the formation mechanism of the twins and removal mechanism of the impurities were discussed.

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Article
Copyright
Copyright © Materials Research Society 2019 

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References

Braga, A.F.B., Moreira, S.P., Zampieri, P.R., Bacchin, J.M.G., and Mei, P.R.: New processes for the production of solar-grade polycrystalline silicon: A review. Sol. Energy Mater. Sol. Cells 92, 418424 (2008).CrossRefGoogle Scholar
Delannoy, Y.: Purification of silicon for photovoltaic applications. J. Cryst. Growth 360, 6167 (2012).CrossRefGoogle Scholar
Chen, T., Zhao, Y.W., Dong, Z.Y., Liu, T., Wang, J., and Xie, H.: Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method. Semicond. Sci. Technol. 28, 16 (2013).CrossRefGoogle Scholar
Morita, K. and Yoshikawa, T.: Thermodynamic evaluation of new metallurgical refining processes for SOG-silicon production. Trans. Nonferrous Met. Soc. China 21, 685690 (2011).CrossRefGoogle Scholar
Tan, Y., Ren, S.Q., Shi, S., Wen, S.T., Jiang, D.C., Dong, W., Ji, M., and Sun, S.H.: Removal of aluminum and calcium in multicrystalline silicon by vacuum induction melting and directional solidification. Vacuum 99, 272276 (2014).CrossRefGoogle Scholar
Qiu, S., Ren, S.Q., Huang, L.Q., Tang, T.Y., Fang, M., and Luo, X.T.: Influence of different vacuum conditions on the distribution of insoluble inclusions in a multi-crystalline silicon ingot. Vacuum 128, 6672 (2016).CrossRefGoogle Scholar
Ren, S.Q., Li, P.T., Jiang, D.C., Tan, Y., Li, J.Y., and Zhang, L.: Removal of metal impurities by controlling columnar grain growth during directional solidification process. Appl. Therm. Eng. 106, 875880 (2016).CrossRefGoogle Scholar
Cablea, M., Zaidat, K., Gagnoud, A., Nouri, A., Chichignoud, G., and Delannoy, Y.: Multi-crystalline silicon solidification under controlled forced convection. J. Cryst. Growth 417, 4450 (2015).CrossRefGoogle Scholar
Yu, Q.H., Liu, L.J., Li, Z.Y., and Su, P.: Global simulations of heat transfer in directional solidification of multi-crystalline silicon ingots under a traveling magnetic field. J. Cryst. Growth 401, 285290 (2014).CrossRefGoogle Scholar
Buchovska, I., Dropka, N., Kayser, S., and Kiessling, F.M.: The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon. J. Cryst. Growth 507, 299306 (2019).CrossRefGoogle Scholar
Atia, A., Ghernaout, B., Bouabdallah, S., and Bessaïh, R.: Three-dimensional oscillatory mixed convection in a Czochralski silicon melt under the axial magnetic field. Appl. Therm. Eng. 105, 704715 (2016).CrossRefGoogle Scholar
Li, Y.R., Ruan, D.F., Imaishi, N., Wu, S.Y., Peng, L., and Zeng, D.L.: Global simulation of a silicon Czochralski furnace in an axial magnetic field. Int. J. Heat Mass Transfer 46, 28872898 (2003).CrossRefGoogle Scholar
Wei, J., Zhang, H., Zheng, L., Wang, C., and Zhao, B.: Modeling and improvement of silicon ingot directional solidification for industrial production systems. Sol. Energy Mater. Sol. Cells 93, 15311539 (2009).CrossRefGoogle Scholar
Ma, W.C., Zhong, G.X., Sun, L., Yu, Q.H., Huang, X.M., and Liu, L.J.: Influence of an insulation partition on a seeded directional solidification process for quasi-single crystalline silicon ingot for high-efficiency solar cells. Sol. Energy Mater. Sol. Cells 100, 231238 (2010).CrossRefGoogle Scholar
Wen, S.T., Jiang, D.C., Shi, S., Tan, Y., Li, P.T., Gu, Z., and Zhang, X.F.: Determination and controlling of crystal growth rate during silicon purification by directional solidification. Vacuum 125, 7580 (2016).CrossRefGoogle Scholar
Yang, X., Ma, W., Lv, G., Wei, K., Luo, T., and Chen, D.: A modified vacuum directional solidification system of multicrystalline silicon based on optimizing for heat transfer. J. Cryst. Growth 400, 714 (2014).CrossRefGoogle Scholar
Randle, V.: Twinning-related grain boundary engineering. Acta Mater. 52, 40674081 (2004).CrossRefGoogle Scholar
Stokkan, G.: Relationship between dislocation density and nucleation of multicrystalline silicon. Acta Mater. 58, 32233229 (2010).CrossRefGoogle Scholar
Stokkan, G.: Twinning in multicrystalline silicon for solar cells. J. Cryst. Growth 384, 107113 (2013).CrossRefGoogle Scholar
Lin, H.K., Wu, M.C., Chen, C.C., and Lan, C.W.: Evolution of grain structures during directional solidification of silicon wafers. J. Cryst. Growth 439, 4046 (2016).CrossRefGoogle Scholar
Derby, J.J. and Shuaeib, F.M.: Crystal growth, bulk: Theory and models. In Reference Module in Materials Science and Materials Engineering, S. Hashmi, ed. (Elsevier, Amsterdam, Netherlands, 2016); pp. 119.Google Scholar
Jaber, T.J., Saghir, M.Z., and Viviani, A.: Three-dimensional modelling of GeSi growth in presence of axial and rotating magnetic fields. Eur. J. Mech. B Fluid 28, 214223 (2009).CrossRefGoogle Scholar
Lan, C.W., Lee, I.F., and Yen, B.C.: Three-dimensional analysis of flow and segregation in vertical Bridgman crystal growth under axial and transversal magnetic fields. J. Cryst. Growth 254, 503515 (2003).CrossRefGoogle Scholar
Dadzis, K., Ehrig, J., Niemietz, K., Pätzold, O., Wunderwald, U., and Friedrich, J.: Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field. J. Cryst. Growth 333, 715 (2011).CrossRefGoogle Scholar
Fujiwara, K., Maeda, K., Usami, N., Sazaki, G., Nose, Y., and Nakajima, K.: Formation mechanism of parallel twins related to Si-facetted dendrite growth. Scr. Mater. 57, 8184 (2007).CrossRefGoogle Scholar
Wu, M.C., Yang, C.F., and Lan, C.W.: Minority lifetime degradation of silicon wafers after electric zone melting. J. Cryst. Growth 420, 7479 (2015).CrossRefGoogle Scholar
Li, Z.Y., Liu, L.J., Ma, W.C., and Kakimoto, K.: Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells. J. Cryst. Growth 318, 304312 (2011).CrossRefGoogle Scholar
Camel, D., Drevet, B., Brizé, V., Disdier, F., Cierniak, E., and Eustathopoulos, N.: The crucible/silicon interface in directional solidification of photovoltaic silicon. Acta Mater. 129, 415427 (2017).CrossRefGoogle Scholar
Barin, I.: Thermochemical Data of Pure Substances, 3rd ed. (CVH, Weinheim, Germany, 1995); pp. 722723.CrossRefGoogle Scholar
Han, Z.C., Zhu, X.F., and Liu, L.: SOG-Si Purification Technology and Equipment, 1st ed. (Metallurgical Industry Press, Beijing, China, 2011); pp. 5253.Google Scholar
Chen, X.H. and Yan, H.: Solid–liquid interface dynamics during solidification of Al 7075–Al2O3np based metal matrix composites. Mater. Des. 94, 148158 (2016).CrossRefGoogle Scholar
Ren, S.Q., Li, P.T., Jiang, D.C., Shi, S., Li, J.Y., Wen, S.T., and Tan, Y.: Removal of Cu, Mn and Na in multicrystalline silicon by directional solidification under low vacuum condition. Vacuum 115, 108112 (2015).CrossRefGoogle Scholar