Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Islam, Didarul
and
Cappelletti, R. L.
1991.
Structural evolution during annealing of laser-ablation-deposited Ge-Sn-Se amorphous films.
Physical Review B,
Vol. 44,
Issue. 6,
p.
2516.
Brongersma, S. H.
Kools, J. C. S.
Baller, T. S.
Beijerinck, H. C. W.
and
Dieleman, J.
1991.
Secondary electrons generated by fast neutral bombardment of the growing film during laser ablation deposition.
Applied Physics Letters,
Vol. 59,
Issue. 11,
p.
1311.
Fayek, S. A.
and
Ali, M. H.
1995.
Electrical properties and phase transition of Ge1−xSnxSe2.5 thin films.
Journal of Materials Science,
Vol. 30,
Issue. 11,
p.
2838.
Němec, P
Frumar, M
Frumarová, B
Jelı́nek, M
Lančok, J
and
Jedelský, J
2000.
Pulsed laser deposition of pure and praseodymium-doped Ge–Ga–Se amorphous chalcogenide films.
Optical Materials,
Vol. 15,
Issue. 3,
p.
191.
Frumar, M.
Frumarova, B.
Nemec, P.
Wagner, T.
Jedelsky, J.
and
Hrdlicka, M.
2006.
Thin chalcogenide films prepared by pulsed laser deposition – new amorphous materials applicable in optoelectronics and chemical sensors.
Journal of Non-Crystalline Solids,
Vol. 352,
Issue. 6-7,
p.
544.
Deepika
Rathore, K S
and
Saxena, N S
2009.
A kinetic analysis on non-isothermal glass–crystal transformation in Ge1−xSnxSe2.5(0 ≤x≤ 0.5) glasses.
Journal of Physics: Condensed Matter,
Vol. 21,
Issue. 33,
p.
335102.