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Preparation and Characterization of BaTiO3 Thin Films on MgO-buffered Si(100) Substrates by RF Sputtering

Published online by Cambridge University Press:  31 January 2011

Sangsub Kim  and
Shunichi Hishita
Sangsub Kim*
Affiliation:
Department of Materials Science and Metallurgical Engineering, Sunchon National University, 315 Maegok-dong, Sunchon 540–742, Korea
Shunichi Hishita
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki 305, Japan
*
a)Address all correspondence to this author.
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Abstract

We report the results of a study on the deposition and characterization of partially oriented BaTiO3 thin films on MgO-buffered Si(100) by radio-frequency magnetron sputtering. The structural and morphological characteristics of the MgO buffer layer were investigated as a function of substrate temperature. The x-ray θ-2θ, φ scans, and observation of surface morphology revealed that MgO grew with a tendency of (001) orientation. Partially (00l) or (h00) textured BaTiO3 thin films were obtained on Si(100) with the MgO buffer layer while randomly oriented BaTiO3 thin films with large-scale cracks on the surface were made without the MgO layer. Pt/BaTiO3/Pt multistructures were formed on Si(100), MgO/Si(100), and MgO(100) single crystal substrates to conduct preliminary electrical measurements for metal-insulator-metal type capacitor. Comparison of the crystallographic orientation, morphology, and electrical properties between the BaTiO3 films on Si(100) with and without the MgO buffer layer supported the favorable role of the MgO layer as a buffer for the growth of BaTiO3 films on Si(100).

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 4 , April 1997 , pp. 1152 - 1159
Copyright
Copyright © Materials Research Society 1997

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