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Prediction of chemical vapor deposition rates on monofilaments and its implications for fiber properties

Published online by Cambridge University Press:  31 January 2011

S.A. Gökoĝlu
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
M. Kuczmarski
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
L.C. Veitch
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
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Abstract

Deposition rates are predicted in a cylindrical upflow reactor designed for chemical vapor deposition (CVD) on monofilaments. Deposition of silicon from silane in a hydrogen carrier gas is chosen as a relevant example. The effects of gas and surface chemistry are studied in a two-dimensional axisymmetric flow field for this chemically well-studied system. Model predictions are compared to experimental CVD rate measurements. The differences in some physical and chemical phenomena between such small diameter (∼150 μm) fiber substrates and other typical CVD substrates are highlighted. The influence of the Soret mass transport mechanism is determined to be extraordinarily significant. The difficulties associated with the accurate measurement and control of the fiber temperature are discussed. Model prediction sensitivities are investigated with respect to fiber temperatures, fiber radii, Soret transport, and chemical kinetic parameters. The implications of the predicted instantaneous rates are discussed relative to the desired fiber properties for both batch and continuous processes.

Type
Articles
Copyright
Copyright © Materials Research Society 1992

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References

1Stephens, J.R., “Intermetallic and Ceramic Matrix Composites for 815 to 1370 ‘deg;C (1500 to 2500 °F) Gas Turbine Engine Applications,” NASA TM–102326, 1990.Google Scholar
2Ning, X. J. and Pirouz, P., J. Mater. Res. 6, 22342248 (1991).CrossRefGoogle Scholar
3Jensen, K. F., in Advances in Chemistry Series, edited by Hess, D. W. and Jensen, K. F., No. 221 (American Chemical Society, Washington, DC, 1989), pp. 199263.Google Scholar
4Gokoglu, S. A., in Chemical Vapor Deposition XI, edited by Spear, K. E. and Cullen, G.W. (The Electrochemical Society, 1990), pp. 19 (also, NASA CR–185301).Google Scholar
5Revankar, V., Scholtz, J., and Hlavacek, V., Ceram. Eng. Sci. Proc. 9 (7–8), 919930 (1988).CrossRefGoogle Scholar
6Alam, M.K. and Puneet, V., ASME HTD 184, 99–106 (1991).Google Scholar
7Schlotz, J.H. and Hlavacek, V., J. Electrochem Soc. 137, 34593469 (1990); see also J. H. Schlotz, J. Gatica, H. J. Viljoen, and V. Hlavacek, J. Cryst. Growth 108, 190–202 (1991).CrossRefGoogle Scholar
8Gokoglu, S. A., Arnold, W. A., Tsui, P., and Chait, A., in Transport Phenomena in Manufacturing (ASME FED, 1989), Vol. 90, pp. 920.Google Scholar
9Gokoglu, S. A., Kuczmarski, M., Veitch, L., Tsui, P., and Chait, A., in Chemical Vapor Deposition XI, edited by Spear, K. E. and Cullen, G. W. (The Electrochemical Society, 1990), pp. 3137 (also, NASA TM–103631).Google Scholar
10Gokoglu, S. A., in Chemical Vapor Deposition of Refractory Metals and Ceramics II, edited by Besmann, T. M., Gallois, B. M., and Warren, J. W. (Mater. Res. Soc. Symp. Proc. 250, Pittsburgh, PA, 1992), pp. 1728 (also NASA TM–105386).Google Scholar
11FLUENT Version 3.02 Manual (Creare, Inc., Hanover, NH).Google Scholar
12Hashimoto, K., Miura, K., Masuda, T., Toma, M., Sawai, H., and Kawase, M., J. Electrochem. Soc. 137, 10001007 (1990).CrossRefGoogle Scholar
13Moffat, H. K. and Jensen, K. F., J. Electrochem. Soc. 135, 459471 (1988).CrossRefGoogle Scholar
14Breiland, W.G. and Coltrin, M.E., J. Electrochem. Soc. 137, 23132319 (1990).CrossRefGoogle Scholar
15Hirshfelder, J.P., Curtiss, C.F., and Bird, R.B., Molecular Theory of Gases and Liquids (J. Wiley and Sons, New York, 1954).Google Scholar
16Coltrin, M.E., Kee, R.J., and Evans, G.H., J. Electrochem. Soc. 136, 819829 (1989). The kinetic rate constants for reactions given by Eqs. (Gl) and (G2), extended to higher temperatures applicable to this study, are obtained in the Arrhenius form by private communication from Dr. Harry K. Moffat and Dr. Micheal E. Coltrin, Sandia National Laboratories, Albuquerque, NM, 1990.CrossRefGoogle Scholar
17Giunta, C.J., McCurdy, R.J., Chapple-Sokol, J.D., and Gordon, R.G., J. Appl. Phys. 67, 10621075 (1990).CrossRefGoogle Scholar
18Moffat, H.K., Jensen, K.F., and Carr, R.W., J. Phys. Chem. 95, 145154 (1991).CrossRefGoogle Scholar