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Polarity-induced changes in the nanoindentation response of GaAs

Published online by Cambridge University Press:  03 March 2011

E. Le Bourhis ,
G. Patriarche ,
L. Largeau  and
J.P. Rivière
E. Le Bourhis*
Affiliation:
Université de Poitiers, Laboratoire de Métallurgie Physique, UMR 6630 CNRS, SP2MI-Téléport 2, B.P. 30179, 86962 Chasseneuil Cedex, France
G. Patriarche
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, 91460 Marcoussis, France
L. Largeau
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, 91460 Marcoussis, France
J.P. Rivière
Affiliation:
Laboratoire de Physique des Solides et de Cristallogénèse, UMR 8635 CNRS, 92195 Meudon Cedex, France
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

We studied the polarity-induced changes in the nanoindentation response of GaAs{111}. The nanoindentations were made under a large range of loads (Fmax between 0.2 mN and 50 mN) at room temperature on {111} faces of A (Ga) or B (As) character. The loading–unloading curves were compared first, with special attention addressed to pop-in events and hardness values (reported previously for microindentation). Transmission electron microscopy was used to observe the nanoindentation structures generated at the two polar surfaces. The size of the dense plastic zone generated around the indent site was found to increase linearly with √Fmax and similarly for both polar surfaces. The indentation rosettes possess a threefold symmetry with arms developed along the <110> directions parallel to the surface. Sizes were found to be very close for both polar surfaces and the entire load range. For an A-polar face, the rosette arms are constituted by two arms: a long arm (LA, α dislocations) and a short arm (β dislocations). At the B surface, only the LA (β dislocations) are formed. Furthermore, microtwinning was observed only for an A-polar face, similar to previous observations of anisotropic microtwinning at GaAs(001) surfaces.

Keywords

NanoindentationSemiconductorTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 1 , January 2004 , pp. 131 - 136
Copyright
Copyright © Materials Research Society 2004

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