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Plasticity contributions to interface adhesion in thin-film interconnect structures

Published online by Cambridge University Press:  31 January 2011

Michael Lane ,
Reinhold H. Dauskardt ,
Anna Vainchtein  and
Huajian Gao
Michael Lane
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
Reinhold H. Dauskardt
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305–2205
Anna Vainchtein
Affiliation:
Department of Mechanical Engineering, Stanford University, Stanford, California 94305–3030
Huajian Gao
Affiliation:
Department of Mechanical Engineering, Stanford University, Stanford, California 94305–3030
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Abstract

The effects of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures were explored using experiments and multiscale simulations. Particular attention was given to the relationship between the intrinsic work of adhesion, Go, and the measured macroscopic fracture energy, Gc. Specifically, the TaN/SiO2 interface fracture energy was measured in thin-film Cu/TaN/SiO2 structures in which the Cu layer was varied over a wide range of thickness. A continuum/FEM model with cohesive surface elements was employed to calculate the macroscopic fracture energy of the layered structure. Published yield properties together with a plastic flow model for the metal layers were used to predict the plasticity contribution to interface fracture resistance where the film thickness (0.25–2.5 μm) dominated deformation behavior. For thicker metal layers, a transition region was identified in which the plastic deformation and associated plastic energy contributions to Gc were no longer dominated by the film thickness. The effects of other salient interface parameters including peak cohesive stress and Go are explored.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2758 - 2769
Copyright
Copyright © Materials Research Society 2000

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