Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T02:15:30.375Z Has data issue: false hasContentIssue false
  • English
  • Français

The plasma arc production of Si-based ceramic whiskers

Published online by Cambridge University Press:  31 January 2011

C.A. Pickles  and
J.M. Toguri
C.A. Pickles
Affiliation:
Department of Materials and Metallurgical Engineering, Queen's University, Kingston, Ontario, K7L 3N6, Canada
J.M. Toguri
Affiliation:
Department of Metallurgy and Materials Science, University of Toronto, Toronto, Ontario, M5S 1A4, Canada
Get access

Abstract

Silicon-based ceramic whiskers, such as silicon carbide and silicon nitride, were produced in a plasma arc reactor. Silicon monoxide gas was generated by reacting briquettes of silica and carbon according to the following reaction: SiO2(s or l) + C(s) = SiO(g) + CO(g). The effects of operating variables on the production of silicon monoxide are discussed. The silicon monoxide gas was then back-reacted with carbon monoxide to produce silicon carbide whiskers according to the following reaction: SiO(g) + 3CO(g) = SiC(s) + 2CO2(g). In the presence of nitrogen, the product contained some silicon nitride and silicon oxynitride whiskers. The effects of gas composition and flow rate, crucible mass, and alkali additions on the amount and morphology of the whiskers were determined. It is concluded that the whiskers grew by a vapor-liquid-solid mechanism.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 8 , August 1993 , pp. 1996 - 2003
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Levitt, A. P., Whisker Technology (Wiley Interscience, New York, 1970), p. 6.Google Scholar
2Lubin, G., Handbook of Fiberglass and Advanced Plastics and Composites (Van Nostrand Reinhold, New York, 1970), p. 255.Google Scholar
3Knippenberg, W. F. and Verspui, G., Proc. Int. Conf. on Silicon Carbide, 3rd, 1973, edited by Marshall, R. C. (University of South Carolina Press, Columbia, SC, 1974), pp. 108–122.Google Scholar
4Ryan, C. E., Berman, I., Marshall, R. C., Considine, D. P., and Hawley, J. J., J. Cryst. Growth 1 (5), 255–262 (1967).CrossRefGoogle Scholar
5Merz, K.M., Proc. Conf. on Silicon Carbide, Boston, 1959, pp. 73–83.Google Scholar
6Cutler, I.B., “Production of Silicon Carbide from Rice Hulls”, U.S. Patent 3754076, August 1973.Google Scholar
7Krishnarao, R.V., Godkhindi, M.M., Mukunda, P.G.I., and Chakraborty, M., J. Am. Ceram. Soc. 74 (11), 2869–2875 (1991).CrossRefGoogle Scholar
8Shyne, J. J. and Milewski, J. V., “Growing Silicon Carbide Whiskers,” U.S. Patent 3 622272, November 1971.Google Scholar
9Knippenberg, W. F. and Verspui, G., Philips Tech. Rev. 29 (8/9), 252–253 (1968).Google Scholar
10Knippenberg, W. F., Verspui, G., and Philips, N. V., Proc. Int. Conf. on Silicon Carbide, 2nd, 1968, edited by Henisch, H. K. (Pergamon Press, Oxford, 1969), pp. S33–S44.Google Scholar
11Wada, H., Proc. Int. Symp. on Advanced Structural Materials, edited by Wilkinson, D.S. (CIM, Pergamon Press, Oxford, 1988), pp. 149–156.Google Scholar
12Saito, H. and Yamai, I., Yogyo Kyokaishi 88 (5), 265–270 (1980).CrossRefGoogle Scholar
13Saito, H. and Yamai, I., Yogyo Kyokaishi 88 (6), 330–336 (1980).CrossRefGoogle Scholar
14Saito, H., Hayashi, T., and Miura, K., Nippon Kagaku Kaishi 9, 1371–1377 (1981).CrossRefGoogle Scholar
15Saito, H., Hayashi, T., and Miura, K., Nippon Kagaku Kaishi 3, 401–407 (1982).CrossRefGoogle Scholar
16Saito, H. and Urakawa, T., “Beta-Type Silicon Nitride Whiskers”, U.S. Patent 4521393, June 4, 1985.Google Scholar
17Knippenberg, W. F. and Verspui, G., “Crystal Whiskers of Silicon Nitride”, Ger. Offen. 1950023, April 9, 1970.Google Scholar
18Schei, A. and Sandberg, O., Selected Topics in High Temperature Chemistry, edited by Førland, T., Grjotheim, K., Motzfeldt, K., and Urnes, S. (Universitetsforlaget, Oslo, Norway, 1966), pp. 141–150.Google Scholar
19Schei, A. and Halvorsen, S. A., Proc. of the Ketil Motzfeldt Symp., Norwegian Institute of Technology, Trondheim, Norway, May 24, 1991, pp. 41–56.Google Scholar
20Kikuchi, T., Kurosawa, T., and Yagihashi, T., Trans. Jpn. Inst. Metals 10 (12), 140–146 (1969).CrossRefGoogle Scholar
21Haas, L.A. and Khalafalla, S.E., “Effect of Physical Parameters on the Reaction of Graphite with Silica in Vacuum,” U. S. Bureau of Mines, Report of Investigations, No. 7207 (1968).Google Scholar