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Photopyroelectric (PPE) determination of thermal diffusivity of Bi2Te2.85Se0.15 sintered thermoelectric semiconductors

Published online by Cambridge University Press:  31 January 2011

Hideo Wada ,
Masahito Watanabe ,
Jun Morimoto  and
Toru Miyakawa
Hideo Wada
Affiliation:
Corporate R & D Center of Mitsui Mining and Smelting Co., Ltd., 1333–2, Haraichi, Ageo, Saitama 362, Japan
Masahito Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20, Hashirimizu, Yokosuka, Kanagawa 239, Japan
Jun Morimoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20, Hashirimizu, Yokosuka, Kanagawa 239, Japan
Toru Miyakawa
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20, Hashirimizu, Yokosuka, Kanagawa 239, Japan
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Abstract

Thermal diffusivity of the sintered semiconductors was measured by the photopyroelectric (PPE) method. The measurement based on the phase-modulation frequency characteristics was shown to give superior results, eliminating errors expected in the conventional signal amplitude-distance characteristics measurements. Thermal diffusivities of the melt-grown and hot-pressed samples were found to be αmelt(c⊥) = 0.014 cm2/s, αmelt(c//) = 0.011 cm2/s, αhot(c⊥) = 0.012 cm2/s, and αhot(c//) = 0.008 cm2/s, depending on the relation between the c-axis direction of grain and thermal flow direction. The thermal diffusivity of the hot-pressed samples shows a strong dependence on the hot-press pressure through the orientation factor.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 8 , August 1991 , pp. 1711 - 1714
Copyright
Copyright © Materials Research Society 1991

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