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Photopyroelectric (PPE) determination of thermal diffusivity of Bi2Te2.85Se0.15 sintered thermoelectric semiconductors

Published online by Cambridge University Press:  31 January 2011

Hideo Wada ,
Masahito Watanabe ,
Jun Morimoto  and
Toru Miyakawa
Hideo Wada
Affiliation:
Corporate R & D Center of Mitsui Mining and Smelting Co., Ltd., 1333–2, Haraichi, Ageo, Saitama 362, Japan
Masahito Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20, Hashirimizu, Yokosuka, Kanagawa 239, Japan
Jun Morimoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20, Hashirimizu, Yokosuka, Kanagawa 239, Japan
Toru Miyakawa
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, 1–10–20, Hashirimizu, Yokosuka, Kanagawa 239, Japan
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Abstract

Thermal diffusivity of the sintered semiconductors was measured by the photopyroelectric (PPE) method. The measurement based on the phase-modulation frequency characteristics was shown to give superior results, eliminating errors expected in the conventional signal amplitude-distance characteristics measurements. Thermal diffusivities of the melt-grown and hot-pressed samples were found to be αmelt(c⊥) = 0.014 cm2/s, αmelt(c//) = 0.011 cm2/s, αhot(c⊥) = 0.012 cm2/s, and αhot(c//) = 0.008 cm2/s, depending on the relation between the c-axis direction of grain and thermal flow direction. The thermal diffusivity of the hot-pressed samples shows a strong dependence on the hot-press pressure through the orientation factor.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 8 , August 1991 , pp. 1711 - 1714
Copyright
Copyright © Materials Research Society 1991

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References

1.Imaizumi, H., Yamaguti, H., Kaibe, H., and Nishida, I., Proc. 7th Int. Conf. on Thermoelectric Energy Conversion, Arlington, VA, 141 (1988).Google Scholar
2.Kaibe, H., Sakata, M., Isoda, Y., and Nishida, I., J. Jpn. Inst. Metals 53, 958 (1989).CrossRefGoogle Scholar
3.Wada, H., Sato, T., Takahashi, K., and Nakastukasa, N., J. Mater. Res. 5, 1052 (1990).CrossRefGoogle Scholar
4.Uemura, K. and Nishida, I., Netsudenhandotai to sono Oyo (Thermoelectric Semiconductors and its Application) (Nikkan Kogyo, Tokyo, 1988), Chap. 8, p. 193 (in Japanese).Google Scholar
5.Mandelis, A., Photoacoustic and Thermal Wave Phenomena in Semiconductors (North-Holland, New York, 1987), Chap. 6, p. 137.Google Scholar
6.Adams, M. J. and Kirkbright, G. F., Analyst. 102, 281 (1977).CrossRefGoogle Scholar
7.Charpentier, P., Lepourte, F., and Bertrand, L., J. Appl. Phys. 53, 608 (1982).CrossRefGoogle Scholar
8.Cesar, C. L., Vargas, H., Filho, J. M., and Miranda, L. C. M., Appl. Phys. Lett. 43, 555 (1983).CrossRefGoogle Scholar
9.Mandelis, A. and Zver, M. M., J. Appl. Phys. 57, 4421 (1985).CrossRefGoogle Scholar
10.Ghizoni, C. C. and Miranda, L. C. M., Phys. Rev. B 32, 8392 (1985).CrossRefGoogle Scholar
11.Lotgering, F. K., Inorg, J.. Nucl. Chem. 9, 113 (1959).CrossRefGoogle Scholar
12.Wada, H., Morimoto, J., Miyakawa, T., and T. Irie: Mater. Res. Bull. XXVI, 179 (1991).Google Scholar