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Photoluminescence intensity of GaN films with widely varying dislocation density

Published online by Cambridge University Press:  31 January 2011

Yue Jun Sun ,
Oliver Brandt  and
Klaus H. Ploog
Yue Jun Sun*
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
Oliver Brandt
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
Klaus H. Ploog
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, D-10117 Berlin, Germany
*
a)Address all correspondence to this author. e-mail: [email protected].
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Abstract

We investigated the impact of the presence of dislocations on room-temperature photoluminescence intensity in GaN films grown by molecular beam epitaxy. To determine both screw and edge dislocation densities, we employed x-ray diffraction in conjunction with a geometrical model, which relate the width of the respective reflections to the polar and azimuthal orientational spread. There is no direct dependence of the emission efficiency on the density of either type of dislocation in the samples under investigation. We conclude that dislocations are not the dominant nonradiative recombination centers for GaN grown by molecular beam epitaxy.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 5 , May 2003 , pp. 1247 - 1250
Copyright
Copyright © Materials Research Society 2003

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References

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