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Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films

Published online by Cambridge University Press:  03 March 2011

Spyros Gallis ,
Harry Efstathiadis ,
Mengbing Huang ,
Ei Ei Nyein ,
Uwe Hommerich  and
Alain E. Kaloyeros
Spyros Gallis
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
Harry Efstathiadis
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
Mengbing Huang
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
Ei Ei Nyein
Affiliation:
Department of Physics, Hampton University, Hampton, Virginia 23668
Uwe Hommerich
Affiliation:
Department of Physics, Hampton University, Hampton, Virginia 23668
Alain E. Kaloyeros*
Affiliation:
School of NanoSciences and NanoEngineering, The University at Albany-SUNY, Albany, New York 12203
*
a) Address all correspondence to this author.e-mail: [email protected]
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Abstract

Room-temperature photoluminescence (PL) was observed at 1540 nm in erbium-implanted amorphous silicon carbide (a-SiC:Er) films grown by thermal chemical vapor deposition at 800 °C. The PL spectra of the a-SiC:Er samples did not exhibit any defect-generated luminescence, with the PL intensity at 1540 nm dropping only by a factor of 3.6 as the sample temperature was increased from 14 K to room temperature. Time-resolved PL measurements showed that the Er3+ luminescence lifetime of approximately 0.6 ms was nearly independent of sample temperature. In addition, luminescence quenching was observed as implanted Er dose exceeded 7 × 1015 ions/cm2. It is suggested that the lower density of Si and C vacancies in the stoichiometric a-SiC:Er, as compared to its non-stoichiometric a-Si1-xCx counterpart, along with the incorporation of a higher Er dopant concentration, can effectively quench defect-produced luminescence and lead to a significant improvement in PL performance. These properties indicate that stoichiometric a-SiC is potentially a viable candidate for optoelectronic devices operating in the 1540 nm region.

Keywords

AmorphousChemical vapor deposition (CVD)Optical properties
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2389 - 2393
Copyright
Copyright © Materials Research Society 2004

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