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Photoelectrochemical properties and crystalline structure change of Sb-doped TiO2 thin films prepared by the sol-gel method

Published online by Cambridge University Press:  01 November 2004

Zongmin Bei
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Dasen Ren*
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Xiaoli Cui
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Jie Shen
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Xiliang Yang
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
Zhuangjian Zhang
Affiliation:
Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Ti1−XSbXO2 samples were obtained from dip-coating sol-gel method and a subsequent anneal at 450 °C. They had an average crystallite size of 13.3–20 nm. Cyclic voltammograms taken under ultraviolet (UV) and Xe lamp illumination in a 0.5 M Na2SO4 electrolyte showed that the Sb-doped samples had greater photocurrent densities than pure titania electrode, with an optimal Sb concentration of 0.2%. Oxidative peaks were observed in the cyclic voltammograms obtained in the dark after certain exposure duration to UV light. X-ray diffraction patterns and Raman spectra show a phase transformation from brookite to anatase in the samples with Sb concentration up to 0.2%. Ti4+ ions were substituted by Sb to form the anatase structure of Sb–O–Ti, improving the crystallization efficiency. The Sb–Sb bonds were formed due to the introduction of excessive Sb atoms.

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Articles
Copyright
Copyright © Materials Research Society 2004

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