Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-23T07:19:09.325Z Has data issue: false hasContentIssue false

Photo-assisted crystallization of zirconia thin films prepared using chelate compounds

Published online by Cambridge University Press:  31 January 2011

Kaori Nishizawa*
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
Takeshi Miki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
Kazuyuki Suzuki
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
Kazumi Kato
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), Shimoshidami, Moriyama-ku, Nagoya 463-8560, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

A highly crystallized and smooth-surfaced zirconia (ZrO2) thin film was prepared using a precursor solution with 2,4-pentanedione addition (molar ratio of 1:1 for zirconium alkoxide); the film was irradiated with ultraviolet (UV) light using an ultrahigh-pressure mercury lamp. This thin film was compared with another thin film, which prepared using a precursor solution without additives and UV irradiation. The crystallinity of ZrO2 thin films improved with increasing 2,4-pentanedione addition and UV irradiation time and changed according to the type of organic additives. These results occurred presumably because the orientation of polymerization in zirconium alkoxide units and stability of chelate compounds for UV irradiation were controlled under these conditions. In addition, the method was effective for lower-temperature crystallization of highly crystallized, smooth-surfaced thin films.

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Chang, J.P.Lin, Y-S.: Dielectric property and conduction mechanism of ultrathin zirconium oxide films. Appl. Phys. Lett. 79, 3666 2001CrossRefGoogle Scholar
2Cho, B-O., Wang, J., Sha, L.Chang, J.P.: Tuning the electrical properties of zirconium oxide thin films. Appl. Phys. Lett. 80, 1052 2002CrossRefGoogle Scholar
3Robertson, J.: Band offsets of wide-band-gap oxides and implications for future electronic devices. J. Vac. Sci. Technol., B 18, 1785 2000CrossRefGoogle Scholar
4Kralik, B., Vhang, E.K.Louie, S.G.: Structural properties and quasiparticle band structure of zirconia. Phys. Rev. B 57, 7027 1998CrossRefGoogle Scholar
5Kim, D-Y., Lee, C-H.Park, S.J.: Preparation of zirconia thin films by metalorganic chemical vapor deposition using ultrasonic nebulization. J. Mater. Res. 11, 2583 1996CrossRefGoogle Scholar
6Jeon, T.S., White, J.M.Kwong, D.L.: Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100). Appl. Phys. Lett. 78, 368 2001CrossRefGoogle Scholar
7Copel, M., Gribelyuk, M.Gusev, E.: Structure and stability of ultrathin zirconium oxide layers on Si(001). Appl. Phys. Lett. 76, 436 2000CrossRefGoogle Scholar
8Hubbard, K.J.Schlom, D.G.: Thermodynamic stability of binary oxides in contact with silicon. J. Mater. Res. 11, 2757 1996CrossRefGoogle Scholar
9Komatsu, Y., Sato, T., Ito, S.Akashi, K.: Preparation of YBCO/ZrO2 thin films on Si by MOCVD using a mode converting type of microwave plasma apparatus. Thin Solid Films 341, 132 1999CrossRefGoogle Scholar
10Choi, H.S., Kim, E.H., Choi, I-H., Kim, Y.T., Choi, J.H.Lee, J.Y.: The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure. Thin Solid Films 388, 226 2001CrossRefGoogle Scholar
11Tan, G-L.Wu, X-J.: Electronic conductivity of a ZrO2 thin film as an oxygen sensor. Thin Solid Films 330, 59 1998CrossRefGoogle Scholar
12Zhao, Z.W., Tay, B.K., Huang, L.Yu, G.Q.: Study of the structure and optical properties of nanocrystalline zirconium oxide thin films deposited at low temperatures. J. Phys. D Appl. Phys. 37, 1701 2004CrossRefGoogle Scholar
13Ciosek, J., Paszkowicz, W., Pankowski, P., Firak, J., Stanislawek, U.Patron, Z.: Modification of zirconium oxide film microstructure during post-deposition annealing. Vacuum 72, 135 2004CrossRefGoogle Scholar
14Qi, H.J., Huang, L.H., Tang, Z.S., Cheng, C.F., Shao, J.D.Fan, Z.X.: Roughness evolution of ZrO2 thin films grown by reactive ion beam sputtering. Thin Solid Films 444, 146 2003CrossRefGoogle Scholar
15Li, H., Liang, K., Gu, S.Xiao, G.: Oriented nano-structured ZrO2 thin films on fused quartz substrate by sol-gel process. J. Mater. Sci. Lett. 20, 1301 2001CrossRefGoogle Scholar
16Bae, S-Y., Choi, H-S., Choi, S-Y.Oh, Y-J.: Sol-gel processing for epitaxial growth of ZrO2 thin films on Si(100) wafers. Ceram. Int. 26, 213 2000CrossRefGoogle Scholar
17Niederwald, H., Laux, S., Kennedy, M., Schallenberg, U., Duparre, A., Mertin, M., Kaiser, N.Ristau, D.: Ion-assisted deposition of oxide materials at room temperature by use of different ion sources. Appl. Opt. 38, 3610 1999CrossRefGoogle ScholarPubMed
18Yamamura, H., Iwata, Y.Matsuno, C.: Synthesis of highly oriented zirconia film by sol-gel method. J. Ceram. Soc. Jpn. 105, 918 1997CrossRefGoogle Scholar
19Harada, K., Nakanishi, H., Itozaki, H.Yazu, S.: Growth of buffer layers on Si substrate for high-T c superconducting thin films. Jpn. J. Appl. Phys. 30, 934 1991CrossRefGoogle Scholar
20Yu, J.J., Zhang, J-Y.Boyd, I.W.: Formation of stable zirconium oxide on silicon by photo-assisted sol-gel processing. Appl. Surf. Sci. 186, 190 2002CrossRefGoogle Scholar
21Yu, J.J., Fang, Q., Zhang, J-Y., Wang, Z.M.Boyd, I.W.: Hafnium oxide layers derived by photo-assisted sol-gel processing. Appl. Surf. Sci. 208–209, 676 2003CrossRefGoogle Scholar
22Watanabe, A., Tsuchiya, T.Imai, Y.: Crystal structure of zirconium oxide deposoted as thin films from Zr-acetylacetonate and Zr-ter-butoxide by laser chemical vapor deposition technique. Jpn. J. Appl. Phys. 40, 4051 2001CrossRefGoogle Scholar
23Hayashi, T., Togawa, D., Yamada, M., Sakamoto, W.Hirano, S.: Preparation and properties of Bi4−xLaxTi3O12 ferroelectric thin films using excimer UV irradiation. Jpn. J. Appl. Phys. 41, 6914 2002CrossRefGoogle Scholar
24Hayashi, T., Iizawa, N., Togawa, D., Yamada, M., Sakamoto, W., Kikuta, K.Hirano, S.: Excimer UV processing of (Bi, Nd)4Ti3O12 ferroelectric thin films by chemical solution deposition method. Jpn. J. Appl. Phys. 42, 5981 2003CrossRefGoogle Scholar
25Asakuma, N., Fukui, T., Toki, M., Awazu, K.Imai, H.: Photoinduced hydroxylation at ZnO surface. Thin Solid Films 445, 284 2003CrossRefGoogle Scholar
26Sato, K., Kikuta, K., Iwamoto, Y.Hirano, S.: Effect of UV-irradiation on processing of lead titanate thin film derived from photoreactive [Pb-Ti] precursor modified with alkanolamine. J. Ceram. Soc. Jpn. 108, 998 2000 in JapaneseCrossRefGoogle Scholar
27Nishizawa, K., Miki, T., Suzuki, K.Kato, K.: Novel chemical processing for crystallization of SrBi2Ta2O9 thin films via UV irradiation. Mater. Lett. 52, 20 2002CrossRefGoogle Scholar
28Nishizawa, K., Miki, T., Suzuki, K.Kato, K.: Control of crystallization and crystal orientation of alkoxy-derived SrBi2Ta2O9 thin films by ultraviolet irradiation. J. Mater. Res. 18, 899 2003CrossRefGoogle Scholar
29Nishizawa, K., Miki, T., Suzuki, K.Kato, K.: Wavelength dependence of crystallization of alkoxy-derived ZrO2 thin films prepared by ultraviolet irradiation. J. Mater. Res. 20, 3133 2005CrossRefGoogle Scholar
30Nishizawa, K., Miki, T., Suzuki, K.Kato, K.: Photo-assisted crystallization of zirconia thin films and their electrical evaluation. Thin Solid Films 515, 4004 2007CrossRefGoogle Scholar
31Holgado, J.P., Espinos, J.P., Yubero, F., Justo, A., Ocana, M., Benitez, J.Gonzalez-Elipe, A.R.: Ar stabilization of the cubic/tetragonal phases of ZrO2 in thin films prepared by ion beam induced chemical vapour deposition. Thin Solid Films 389, 34 2001CrossRefGoogle Scholar
32Higashi, N., Murakami, Y., Machida, H., Seki, S., Sawada, Y.Funakubo, H.: New control method for low-temperature deposition limit of metal-organic chemical vapor deposition (MOCVD) by the introduction of organic vapor-application to ZrO2 film preparation. Thin Solid Films 409, 23 2002CrossRefGoogle Scholar
33Wang, S., Xia, G., Fu, X., He, H., Shao, J.Fan, Z.: Preparation and characterization of nanostructured ZrO2 thin films by glancing angle deposition. Thin Solid Films 515, 3352 2007CrossRefGoogle Scholar
34Atik, M., de Neto, P. L., Avaca, L.A.Aegerter, M.A.: Sol-gel thin films for corrosion protection. Ceram. Int. 21, 403 1995CrossRefGoogle Scholar
35Ehrhart, G., Capoen, B., Robbe, O., Boy, P., Turrell, S.Bouazaoui, M.: Structural and optical properties of n-propoxide sol-gel derived ZrO2 thin films. Thin Solid Films 496, 227 2006CrossRefGoogle Scholar
36You, H.C., Ko, F.H.Lei, T.F.: Physical characterization and electrical properties of sol-gel-derived zirconia films. J. Electrochem. Soc. 153, F94 2006CrossRefGoogle Scholar
37Tohge, N., Yamada, K.Noma, N.: Selective coloration of photosensitive ZrO2 gel films. J. Ceram. Soc. Jpn. 109, 359 2001CrossRefGoogle Scholar
38Tohge, N., Hasegawa, M., Noma, N., Kintaka, K.Nishii, J.: Fabrication of two-dimensional gratings using photosensitive gel films and their characterization. J. Sol.-Gel Sci. Technol. 26, 903 2003CrossRefGoogle Scholar
39Noma, N., Yamazaki, S.Tohge, N.: Preparation of new photosensitive ZrO2 gel films using hydroxyl-substituted aromatic ketones as chemical modification reagents and their patterning. J. Sol.-Gel Sci. Technol. 31, 253 2004CrossRefGoogle Scholar
40Kikuta, K., Takagi, K.Hirano, S.: Photoreaction of titanium-based metal-organic compounds for ceramic fine patterning. J. Am. Ceram. Soc. 82, 1569 1999CrossRefGoogle Scholar
41Kikuta, K., Suzumori, K., Takagi, K.Hirano, S.: Patterning of tin oxide film from photoreactive precursor solutions prepared via the addition of N-phenyldiethanolamine. J. Am. Ceram. Soc. 82, 2263 1999CrossRefGoogle Scholar
42Shinmou, K., Tohge, N.Minami, T.: Fine-patterning of ZrO2 thin films by the photolysis of chemically modified gel films. Jpn. J. Appl. Phys. 33, L1181 1994CrossRefGoogle Scholar
43Tohge, N., Zhao, G.Chiba, F.: Photosensitive gel films prepared by the chemical modification and their application to surface-relief gratings. Thin Solid Films 351, 85 1999CrossRefGoogle Scholar