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Oxygen Stoichiometry in PdOxand PdOx/Pt Electrode Layers During Processing of Ferroelectric and High-epsilon Perovskites

Published online by Cambridge University Press:  31 January 2011

K. L. Saenger ,
C. Cabral Jr ,
P. R. Duncombe ,
A. Grill  and
D. A. Neumayer
K. L. Saenger
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
C. Cabral Jr
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
P. R. Duncombe
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
A. Grill
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
D. A. Neumayer
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

High-epsilon (HE) and ferroelectric (FE) perovskites such as (Ba, Sr)TiO3 and SrBi2Ta2O9 are attracting substantial interest for use in dynamic random-access memory and nonvolatile memory. In this paper, we describe how an easily decomposable PdO bottom electrode layer may be used as a marker for possible HE/FE damage induced by exposure to reducing environments. Oxygen loss from PdO films with and without a HE/FE overlayer was monitored by in situ x-ray diffraction during heating in an inert ambient. Additional measurements were performed on PdO films in contact with Pt underlayers. A Pt underlayer was found to reduce the temperature of oxygen release from PdO, suggesting that it may be possible to custom-design PdO-based oxygen sources with specific oxygen release characteristics to resupply the HE/FE with oxygen lost during processing.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 4 , April 2000 , pp. 961 - 966
Copyright
Copyright © Materials Research Society 2000

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References

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