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Outgassing behavior of spin-on-glass (SOG)

Published online by Cambridge University Press:  31 January 2011

J.D. Romero ,
M. Khan ,
H. Fatemi  and
J. Turlo
J.D. Romero
Affiliation:
Materials Technology Development Group, Advanced Micro Devices Inc., 3625 Peterson Way, Santa Clara, California 94088
M. Khan
Affiliation:
Materials Technology Development Group, Advanced Micro Devices Inc., 3625 Peterson Way, Santa Clara, California 94088
H. Fatemi
Affiliation:
Materials Technology Development Group, Advanced Micro Devices Inc., 3625 Peterson Way, Santa Clara, California 94088
J. Turlo
Affiliation:
Materials Technology Development Group, Advanced Micro Devices Inc., 3625 Peterson Way, Santa Clara, California 94088
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Abstract

The outgassing behavior and mechanical properties of polysiloxane based and phosphorus doped silicate based films as planarization candidates for device processing were evaluated using various analytical techniques. After curing between 370 °C and 450 °C, a high temperature rebake above 410 °C caused twice the weight loss in polysiloxane based films as in silicate films. This means that further outgassing, which could occur to a greater degree from polysiloxane than from silicate, could lead to a more probable blistering within the interlayer of the sandwiched spin-on-glass (SOG) during subsequent thermal processing. However, a well-cured polysiloxane would be a better candidate for planarization applications because the film was found to absorb less moisture and had lower stress than the silicate. Due to high silanol content and high porosity in silicate, it was found to absorb six times more water than polysiloxane. When water evolved, significantly higher stress levels were observed in silicate than in polysiloxane during thermal cycle tests. Infrared spectroscopic analysis revealed that polysiloxane contained Si–O–CH3 moiety, which rendered the film flexible, while silicate contained near-stoichiometric SiO2 bonds, which made for a more rigid and dense structure. This difference in the film structures translated to three times higher stress in silicate than in polysiloxane. During device processing, it was seen that silicate films were more prone to cracking than polysiloxane films. The components of the outgassing materials were either volatile organic species from residual solvents not completely burned out during cure, or carbon dioxide and water vapor as by-products from further cure. Gas chromatography indicated that both types of films contained volatile organic residues when cured at 370 °C. However, at 410 °C, volatile organic species were present in the polysiloxane but not in the silicate. A 30 to 60 min cure at temperature greater than 410 °C was then found to adequately cure polysiloxane. It was concluded that a “well cured” polysiloxane based spin-on-glass (SOG) would be more suitable than a silicate based SOG for planarization application.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 9 , September 1991 , pp. 1996 - 2003
Copyright
Copyright © Materials Research Society 1991

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