Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-23T10:55:45.757Z Has data issue: false hasContentIssue false

The origin of driving force for the formation of Sn whiskers at room temperature

Published online by Cambridge University Press:  31 January 2011

Shi-Bo Li*
Affiliation:
School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China
Guo-Ping Bei
Affiliation:
School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China
Hong-Xiang Zhai
Affiliation:
School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China
Zhi-Li Zhang
Affiliation:
School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China
Yang Zhou
Affiliation:
School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China
Cui-Wei Li
Affiliation:
School of Mechanical and Electronic Control Engineering, Beijing Jiaotong University, Beijing 100044, China
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Sn whiskers can form at room temperature on the agglomerated flakes produced by mechanical alloying (MA) of Ti, Sn, and C powders, whether the flakes are stored in air or water. The Sn whiskers forming in air are tens of micrometers to several centimeters in length and 0.5 to ∼10 μm in diameter. Whereas a large amount of Sn polyhedra forms on the flakes that are stored in water, a small amount of Sn whiskers forms on the polyhedra. The driving force for Sn whisker formation is the compressive stress induced by mechanical alloying (MA) and oxidation. The mechanism about the spontaneous growth of metal whiskers is discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Cobb, H.L.: Cadmium whiskers. Monthly Rev. Am. Electroplaters Soc. 33, 28 1946Google Scholar
2Eshelby, J.D.: A tentative theory of metallic whisker growth. Phys. Rev. 91, 755 1953CrossRefGoogle Scholar
3Frank, F.C.: On tin whiskers. Philos. Mag. 44, 854 1953CrossRefGoogle Scholar
4Lindborg, U.: A model for the spontaneous growth of zinc, cadmium and tin whiskers. Acta Metall. 24, 181 1976CrossRefGoogle Scholar
5Sheng, G.T.T., Hu, C.F., Choi, W.J., Tu, K.N., Bong, Y.Y.Nguyen, L.: Tin whiskers studied by focused ion beam imaging and transmission electron microscopy. J. Appl. Phys. 92, 64 2002CrossRefGoogle Scholar
6Choi, W.J., Lee, T.Y., Tu, K.N., Tamura, N., Celestre, R.S., MacDowell, A.A., Bong, Y.Y.Nguyen, L.: Tin whiskers studied by synchrotron radiation scanning x-ray micro-diffraction. Acta Mater. 51, 6253 2003CrossRefGoogle Scholar
7Tu, K.N.: Irreversible processes of spontaneous whisker growth in bimetallic Cu–Sn thin reactions. Phys. Rev. B 49, 2030 1994CrossRefGoogle ScholarPubMed
8Lee, B.Z.Lee, D.N.: Spontaneous growth mechanism of tin whiskers. Acta Mater. 46, 3701 1998CrossRefGoogle Scholar
9Houx, J.P.M.Rabkin, E.: Microstructure evolution and interfacial properties in the Fe–Pb system. Acta Mater. 50, 3159 2002Google Scholar
10Sun, Z.M.Barsoum, M.W.: Spontaneous room temperature extrusion of Pb nano-whiskers from leaded brass surfaces. J. Mater. Res. 20, 1087 2005CrossRefGoogle Scholar
11Iwamura, E., Takagi, K.Ohnishi, T.: Effect of aluminum oxide caps on hillock formation in aluminum alloy films. Thin Solid Films 349, 191 1999CrossRefGoogle Scholar
12Kim, D.K., Heiland, B., Nix, W.D., Arzt, E., Deal, M.D.Plummer, J.D.: Microstructure of thermal hillocks on blanket Al thin films. Thin Solid Films 371, 278 2000CrossRefGoogle Scholar
13Barsoum, M.W.Farber, L.: Room-temperature deintercalation and self-extrusion of Ga from Cr2GaN. Science 284, 937 1999CrossRefGoogle ScholarPubMed
14Sun, Z.M., Gupta, S., Ye, H.Barsoum, M.W.: Spontaneous growth of freestanding Ga nanoribbons from Cr2GaC surfaces. J. Mater. Res. 20, 2618 2005CrossRefGoogle Scholar
15Barsoum, M.W., Hoffman, E.N., Doherty, R.D., Gupta, S.Zavaliangos, A.: Driving force and mechanism for spontaneous metal whisker formation. Phys. Rev. Lett. 93, 206104 2004CrossRefGoogle ScholarPubMed
16Li, S.B.Zhai, H.X.: Synthesis and reaction mechanism of Ti3SiC2 by mechanical alloying of elemental Ti, Si and C powders. J. Am. Ceram. Soc. 88, 2092 2005CrossRefGoogle Scholar
17Rozen, M.: Practical whisker growth control methods. Plating 55(11), 1155 1968Google Scholar
18Sabbagh, N.A.J.McQueen, E.H.J.: Tin whiskers: Causes and remedies. Met. Finish. 73(3), 27 1975Google Scholar
19Tu, K.N.: Irreversible processes of spontaneous whisker growth in bimetallic Cu–Sn thin reactions. Phys. Rev. B 49(3), 2030 1994CrossRefGoogle ScholarPubMed
20Su, P., Ding, M.Chopin, S.: Effects of reflow on the microstructure and whisker growth propensity of Sn finish in Electronic Components and Technology Conference, Proceedings of the 55th ECTC,1, 2005 434Google Scholar
21Osenbach, J.W., Shook, R.L., Vaccaro, B.T., Potteiger, B.D.Amin, A.: Lead free packaging and Sn-whiskers in Electronic Components and Technology Conference, Proceedings of the 54th Electronic Components and Technology Conference,2004) 1314Google Scholar
22Osenbach, J.W., DeLucca, J.M., Potteiger, B.D., Amin, A., Shook, R.L., Baiocchi, F.A.: Sn corrosion and its influence on whisker growth. IEEE Trans. Electronics Packag. Manuf. 30, 23 2007CrossRefGoogle Scholar
23Yi, G.Schwarzacher, W.: Single crystal superconductor nanowires by electrodeposition. Appl. Phys. Lett. 74, 1746 1999CrossRefGoogle Scholar
24Tian, M.L., Wang, J.G., Snyder, J., Kurtz, J., Liu, Y., Schiffer, P., Mallouk, T.E.Chan, M.H.W.: Synthesis and characterization of superconducting single crystal Sn nanowires. Appl. Phys. Lett. 83, 1620 2003CrossRefGoogle Scholar