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Organic light-emitting diodes with hydrogenated In-doped ZnO thin films as transparent conductive electrodes

Published online by Cambridge University Press:  31 January 2011

Young Ran Park  and
Young Sung Kim
Young Ran Park
Affiliation:
Department of Physics, Institute of Basic Science and Center for Nanotubes and Nanocomposites, Sungkyunkwan University, Suwon 440-746, Korea
Young Sung Kim*
Affiliation:
Advanced Material Process of Information Technology, Sungkyunkwan University, Suwon 440-746, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Hydrogenated In-doped ZnO (ZIO:H) films grown at different ratios, R, of hydrogen to argon were deposited at a substrate temperature of 100 °C for the organic light-emitting diodes (OLEDs). The OLEDs with the ZIO:H (R = 0.08) anode achieved a maximum luminance efficiency of 3.4 cd/A and a power efficiency of 0.6 lm/W, which are as good as the values of the control device fabricated on a tin-doped indium oxide (ITO) anode. This indicates that the efficiency of the OLEDs is critically affected by the ratio of injected hydrogen gas during the deposition of the ZIO and that the ZIO:H developed herein is promising as an alternative to conventional ITO.

Keywords

DevicesOptoelectronicThin film
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 6 , June 2008 , pp. 1674 - 1681
Copyright
Copyright © Materials Research Society 2008

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