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Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina

Published online by Cambridge University Press:  31 January 2011

G. S. Cheng ,
L. D. Zhang ,
S. H. Chen ,
Y. Li ,
L. Li ,
X. G. Zhu ,
Y. Zhu ,
G. T. Fei  and
Y. Q. Mao
G. S. Cheng
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
L. D. Zhang
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
S. H. Chen
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
Y. Li
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
L. Li
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
X. G. Zhu
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
Y. Zhu
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
G. T. Fei
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
Y. Q. Mao
Affiliation:
Nanjing Institute of Geology and Palaeontology, Chinese Academy of Sciences, Nanjing 210008, People's Republic of China
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Abstract

Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina was synthesized through a gas reaction of Ga2O vapor with a constant ammonia atmosphere at 1273 K in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, x-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure consists of single-crystalline hexagonal wurtzite GaN nanowires in the uniform pores of anodic alumina about 20 nm in diameter and 40–50 μm in length. The growth mechanism of the ordered nanostructure is discussed. The photoluminescence spectrum of this nanostructure is also reported.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 2 , February 2000 , pp. 347 - 350
Copyright
Copyright © Materials Research Society 2000

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