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Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina

Published online by Cambridge University Press:  31 January 2011

G. S. Cheng ,
L. D. Zhang ,
S. H. Chen ,
Y. Li ,
L. Li ,
X. G. Zhu ,
Y. Zhu ,
G. T. Fei  and
Y. Q. Mao
G. S. Cheng
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
L. D. Zhang
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
S. H. Chen
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
Y. Li
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
L. Li
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
X. G. Zhu
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
Y. Zhu
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
G. T. Fei
Affiliation:
Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, People's Republic of China, and Institute of Advanced Study, University of Science and Technology of China, Hefei 230026, People's Republic of China
Y. Q. Mao
Affiliation:
Nanjing Institute of Geology and Palaeontology, Chinese Academy of Sciences, Nanjing 210008, People's Republic of China
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Abstract

Ordered nanostructure of single-crystalline GaN nanowires in a honeycomb structure of anodic alumina was synthesized through a gas reaction of Ga2O vapor with a constant ammonia atmosphere at 1273 K in the presence of nano-sized metallic indium catalysis. Atomic force microscopy, x-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicate that the ordered nanostructure consists of single-crystalline hexagonal wurtzite GaN nanowires in the uniform pores of anodic alumina about 20 nm in diameter and 40–50 μm in length. The growth mechanism of the ordered nanostructure is discussed. The photoluminescence spectrum of this nanostructure is also reported.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 2 , February 2000 , pp. 347 - 350
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Zhang, Z., Sun, X., Dresselhaus, M.S., and Ying, J.Y., Appl. Phys. Lett. 73, 1589 (1998).CrossRefGoogle Scholar
2.Holland, B.T., Blanford, C.F., and Stein, A., Science 281, 538 (1998).CrossRefGoogle Scholar
3.Park, M., Harrison, C., Chaikin, P.M., Register, R.A., and Adamson, D.H., Science 276, 1401 (1997).CrossRefGoogle Scholar
4.Fasol, G., Science 272, 1751 (1996).CrossRefGoogle Scholar
5.Zolper, J.C., Shul, R.J., Baca, A.G., Wilson, R.G., Pearton, S.J., and Stall, R.A., Appl. Phys. Lett. 68, 2273 (1996).CrossRefGoogle Scholar
6.Chen, Q., Khan, M.A., Wang, J.W., Sun, C.J., Shur, M.S., and Park, H., Appl. Phys. Lett. 69, 794 (1996).CrossRefGoogle Scholar
7.Zolper, C., Shul, R.J., Baca, A.G., Wilson, R.G., Pearton, S.J., and Stall, R.A., Appl. Phys. Lett. 68, 2273 (1996).CrossRefGoogle Scholar
8.Joshkin, V.A., Roberts, J.C., Mcintosh, F.G., Bedair, S.M., Piner, E.L., and Behbehani, M.K., Appl. Phys. Lett. 71, 234 (1997).CrossRefGoogle Scholar
9.Xie, Y., Qian, Y., Wang, W., Zhang, S., and Zhang, Y., Science 272, 1926 (1996).CrossRefGoogle Scholar
10.Han, W., Fan, S., Li, Q., and Hu, Y., Science 277, 1287 (1997).CrossRefGoogle Scholar
11.Masuda, H. and Fukuda, K., Science 268, 1466 (1995).CrossRefGoogle Scholar
12.Masuda, H. and Hasegwa, F., J. Electrochem. Soc. 144, L127 (1997).CrossRefGoogle Scholar
13.Azuhata, T., Sota, T., Suzuki, K., and Nakamura, S., J. Phys.: Condens. Matter 7, L129 (1995).Google Scholar
14.Balkas, C.M. and Davis, R.F., J. Am. Ceram. Soc. 79, 2309 (1996).CrossRefGoogle Scholar
15.Frosch, C.J. and Thurmond, C.D., J. Phys. Chem. 62, 611 (1958).Google Scholar
16.Morales, A.M. and Lieber, C.M., Science 279, 208 (1998).CrossRefGoogle Scholar
17.Trentler, T.J., Hickman, K.M., Goel, S.C., Viano, A.M., Gibbons, P.C., and Burhro, W.E., Science 270, 1791 (1995).CrossRefGoogle Scholar
18.Li, W.Z., Xie, S.S., Qian, L.X., Chang, B.H., Zou, B.S., Zhou, W.Y., Zhao, R.A., and Wang, G., Science 274, 1701 (1996).CrossRefGoogle Scholar
19.Du, Y., Cai, W.L., Mo, C.M., Chen, J., Zhang, L.D., and Zhu, X.G., Appl. Phys. Lett. 74, 2951 (1999).CrossRefGoogle Scholar