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Optical and electrical properties of transparent conducting In2O3–ZrO2 films

Published online by Cambridge University Press:  31 January 2011

S. B. Qadri ,
H. Kim ,
H. R. Khan ,
A. Piqué ,
J. S. Horwitz ,
D. Chrisey  and
E. F. Skelton
S. B. Qadri
Affiliation:
United States Naval Research Laboratory, Washington, District of Columbia 20375-5000
H. Kim
Affiliation:
George Washington University, Washington, District of Columbia
H. R. Khan
Affiliation:
Forschungsinstitut für Edelmetalle und Metallchemie (FEM), 73525 Schwäbisch Gmünd, Germany
A. Piqué
Affiliation:
United States Naval Research Laboratory, Washington, District of Columbia 20375-5000
J. S. Horwitz
Affiliation:
United States Naval Research Laboratory, Washington, District of Columbia 20375-5000
D. Chrisey
Affiliation:
United States Naval Research Laboratory, Washington, District of Columbia 20375-5000
E. F. Skelton
Affiliation:
United States Naval Research Laboratory, Washington, District of Columbia 20375-5000
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Extract

The optical transparencies and electrical conductivities of thin films of In2O3 mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium–zirconium oxide films with a ZrO2 content up to a 15 wt% were conducting and more than 80% transparent from 450 to 700 nm. As the ZrO2 content increased from 0 to 15 wt%, the electrical resistivities increased from 1.28 × 10−3 to 6.48 × 10−2 Ω cm, the carrier densities were decreased from 2.14 × 1020 to 1.0 × 1018/cm3, and the Hall mobilities decreased from 21 to 5 cm2 V−1 s−1, all monotonically.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 1 , January 2000 , pp. 21 - 24
Copyright
Copyright © Materials Research Society 2000

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References

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