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Optical and electrical properties of indium tin oxide thin films with tilted and spiral microstructures prepared by oblique angle deposition

Published online by Cambridge University Press:  31 January 2011

Y. Zhong
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
Y.C. Shin
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
C.M. Kim
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
B.G. Lee
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
E.H. Kim
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
Y.J. Park
Affiliation:
Department of Physics, Inha University, Incheon 402-751, Korea
K.M.A. Sobahan
Affiliation:
Department of Physics, Inha University, Incheon 402-751, Korea
C.K. Hwangbo
Affiliation:
Department of Physics, Inha University, Incheon 402-751, Korea
Y.P. Lee
Affiliation:
Quantum Photonic Science Research Center, Department of Physics, Hanyang University, Seoul 133-791, Korea
T.G. Kim*
Affiliation:
School of Electrical Engineering, Korea University, Seoul 136-701, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The optical and electrical properties of “tilted” and “spiral” indium tin oxide (ITO) thin films are reported. The influence of the flux incident angle on the optical and electrical properties is investigated. When the flux incident angle is increased, both the refractive index and extinction coefficient of the film are decreased, but the resistivity is increased. Thus, the physical properties of the film can be modified over a wide range by adjusting the flux incident angle and substrate rotation scheme. It is suggested that the oblique angle deposition technique provides ITO films with more application possibilities by allowing their optical and electrical properties to be tailored.

Type
Articles
Copyright
Copyright © Materials Research Society 2008

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References

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