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On the time delay of the photoplastic effect

Published online by Cambridge University Press:  03 March 2011

Joseph Pellegrino  and
J. M. Galligan
Joseph Pellegrino
Affiliation:
Department of Metallurgy and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06268
J. M. Galligan
Affiliation:
Department of Metallurgy and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06268
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Abstract

Photoplasticity in mercury cadmium telluride, Hg1-x Cdx Te with x = 0.3, has been studied as a function of light frequency and deformation temperature. We show that there is an easily measurable time delay accompanying irradiation of the crystal and the change in stress. This time delay is temperature dependent, suggesting a diffusion of charge carriers, introduced by the light, to the interior of the crystal. A simple analysis is given of the observed temperature dependence that is consistent with the experiments.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 1 , Issue 1 , February 1986 , pp. 3 - 6
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1Osip'yanand, Yu. A.Petrenko, V. F., Sov. Phys. Dokl. 21, 87 (1976).Google Scholar
2Gutmanas, E. Yu. and Haasen, P., Phys. Status Solidi A 63, 193 (1981).Google Scholar
3Nakagawa, K., Maeda, K., and Takeuchi, S., J. Phys. Soc. Jpn. 49, 1909 (1980).CrossRefGoogle Scholar
4Alexander, H., J. Phys. Suppl. 40, C6–1 (1979).Google Scholar
5Osip'yan, Yu. A. and Petrenko, V. F., Sov. Phys. JETP 48(1), 100 (1978).Google Scholar
6Booyens, H. and Basson, J. H., Phys. Status Solidi A 85, 243 (1984).CrossRefGoogle Scholar
7Cole, S., Willoughby, A. F. W., and Brown, M., J. Cryst. Growth 59, 370(1982).CrossRefGoogle Scholar
8Osip'yan, Yu. A. and Savchenko, I. B., Sov. Phys. JETP Lett. 7, 100 (1968).Google Scholar
9Carlsson, L. and Svensson, C., Solid State Commun. 7, 177 (1969).CrossRefGoogle Scholar
10Osip'yan, Yu. A. and Smirnova, I. S., Phys. Status Solidi 30, 19 (1968).CrossRefGoogle Scholar
11Carlsson, L., J. Appl. Phys. 42, (2) 676 (1971).CrossRefGoogle Scholar
12Mayer, V. and Galligan, J. M., Appl. Phys. Lett. 40(12) 1020 (1982).Google Scholar
13Buck, F. and Ahlquist, C. N., J. Appl. Phys. 45, (4) 1756 (1974).CrossRefGoogle Scholar
14Berlincourt, D., Jaffe, H., and Shiozawa, L. R., Phys. Rev. 129, 1009 (1963).CrossRefGoogle Scholar
15Galligan, J. M., Pellegrino, J., and Tariq, M., in the Proceedings of the Material Research Society Symposium on Defects in Processing Semiconductors, November 1983.Google Scholar
16Pellegrino, J. and Galligan, J. M., J. Vac. Sci. Technol. A 3, 160 (1985).Google Scholar
17Petrenko, V. F. and Whitworth, R. W., Philos. Mag. A 41, 681 (1980).Google Scholar