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On the nature of the oxygen-related defect in aluminum nitride

Published online by Cambridge University Press:  31 January 2011

J. H. Harris ,
R. A. Youngman  and
R. G. Teller
J. H. Harris
Affiliation:
BP Research, Warrensville Research Center, Cleveland, Ohio 44128
R. A. Youngman
Affiliation:
BP Research, Warrensville Research Center, Cleveland, Ohio 44128
R. G. Teller
Affiliation:
BP Research, Warrensville Research Center, Cleveland, Ohio 44128
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Abstract

The oxygen-related defect in an aluminum nitride (AIN) single crystal and in polycrystalline ceramics is investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements, and transmission electron microscopy. The results of these measurements indicate that at oxygen concentrations near 0.75 at.%, a transition in the oxygen accommodating defect occurs. On both sides of this transition, simple structural models for the oxygen defect are proposed and shown to be in good agreement with the thermal conductivity and lattice parameter measurements, and to be consistent with the formation of various extended defects (e.g., inversion domain boundaries) at higher oxygen concentrations.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 8 , August 1990 , pp. 1763 - 1773
Copyright
Copyright © Materials Research Society 1990

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