Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-26T23:27:34.509Z Has data issue: false hasContentIssue false

On the microstructure, chemistry, and dielectric function of BaTiO3 MOCVD thin films

Published online by Cambridge University Press:  03 March 2011

V.P. Dravid
Affiliation:
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208-3108
H. Zhang
Affiliation:
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208-3108
L.A. Wills
Affiliation:
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208-3108
B.W. Wessels
Affiliation:
Department of Materials Science and Engineering, and Materials Research Center, Northwestern University, Evanston, Illinois 60208-3108
Get access

Abstract

Thin films of BaTiO3 deposited on (100)LaAlO3 substrate by metal-organic chemical vapor deposition (MOCVD) are investigated using several electron-optical techniques. Combined high resolution transmission electron microscopy (HRTEM), electron energy loss spectrometry (EELS), and convergent beam electron diffraction (CBED) indicate a substantial influence of lattice strain on the structural and optical characteristics of BaTiO3 films. Spatially resolved EELS and CBED studies indicate that the substrate influence persists up to about 40 nm away from the interface. The changes in the dielectric function of the films, as inferred from spatially resolved EELS, appear to correlate well with internal lattice strain in the films as deduced from convergent beam electron diffraction (CBED).

Type
Articles
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Bauer, E. G., Dodson, B. W., Ehrlich, D. J., Feldman, L. C., Flynn, C. P., Geis, M. W., Harbison, J. P., Matyi, R. J., Peercy, P. S., Petroff, P. M., Phillips, J. M., Stringfellow, G. B., and Zangwill, A., J. Mater. Res. 5, 852 (1990); also see, for example, articles in Ceramics Transactions: Symposium on Ferroelectric Films, edited by Bhalla, A. F. and Nair, A. S. (The American Ceramics Society, Westerville, OH, 1992), Vol. 25.Google Scholar
2Lines, M. E. and Glass, A. M., in Principles and Applications of Ferroelectrics and Related Materials (Clarendon Press, Oxford, U. K., 1977).Google Scholar
3Wills, L. A., Wessels, B. W., Richeson, D. S., and Marks, T. J., Appl. Phys. Lett. 60 (1), 41 (1992).CrossRefGoogle Scholar
4Ball, C. A. and van der Merwe, J. H., in Dislocations in Solids, edited by Nabarro, F. R. N., Chap. 27 (North-Holland, Amsterdam, 1983).Google Scholar
5See articles in Heteroepitaxy of Dissimilar Materials, edited by Farrow, R. F. C., Harbison, J. P., Peercy, P. S., and Zangwill, A. (Mater. Res. Soc. Symp. Proc. 221, Pittsburgh, PA, 1991).Google Scholar
6Kwak, B. S., Erbil, A., Wilkens, B. J., Budai, J. D., Chisholm, M. F., and Boatner, L. A., Phys. Rev. Lett. 68 (25), 3733 (1992).CrossRefGoogle Scholar
7Dravid, V. P., unpublished research.Google Scholar
8Dravid, V. P., Zhang, H., Marks, L. D., and Zhang, J. P., Physica 200, 349 (1992).Google Scholar
9Egerton, R. F., in Electron Energy Loss Spectrometry in Transmission Electron Microscopy (Plenum Press, New York, 1986).Google Scholar
10Chen, J., Wills, L. A., Wessels, B. W., Schulz, D. L., and Marks, T. J., J. Electron. Mater. 22, 701 (1993).CrossRefGoogle Scholar
11Ritchie, R. H., Phys. Rev. 106, 874 (1957).Google Scholar
12Steeds, J. W., in Introduction to Analytical Electron Microscopy, edited by Joy, D.C., Romig, A. D., and Goldstein, J.I. (Plenum Press, New York, 1979).Google Scholar