Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-22T22:47:44.268Z Has data issue: false hasContentIssue false
  • English
  • Français

On the formation of solid state crystallized intrinsic polycrystalline germanium thin films

Published online by Cambridge University Press:  31 January 2011

Zhiguo Meng ,
Zhonghe Jin ,
Gururaj A. Bhat ,
Paul Chu ,
Hoi S. Kwok  and
Man Wong
Zhiguo Meng
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Zhonghe Jin
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Gururaj A. Bhat
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Paul Chu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
Hoi S. Kwok
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Man Wong
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Get access

Abstract

A two-step heat treatment process has been employed to crystallize low pressure deposited thin films of amorphous germanium. Large grain p-type polycrystalline germanium with a Hall effect hole mobility of greater than 300 cm2/Vs has been obtained. Films with near intrinsic conductivity, necessary for the construction of practical enhancement-mode insulated-gate thin film transistors, were obtained by introducing phosphorus as a compensating dopant. High Hall effect electron mobility of 245 cm2/Vs has been measured on the resulting n-type polycrystalline germanium thin films.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 10 , October 1997 , pp. 2548 - 2551
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ohshima, H. and Morozumi, S., IEDM Technical Digest (The IEEE Electron Device Society, December 1989), p. 157.Google Scholar
2.Sunata, T., Yukawa, T., Miyake, K., Matsushita, Y., Murakami, Y., Ugai, Y., Tamamura, J., and Aoki, S., IEEE Trans. Electron Devices 33 (8), 1212 (1986).CrossRefGoogle Scholar
3.King, T. J. and Saraswat, K. C., IEEE Electron Device Lett. 13 (6), 309 (1992).CrossRefGoogle Scholar
4.Tsai, J. A. and Reif, R., in Mechanisms of Thin Film Evolution, edited by Yalisove, S. M., Thompson, C. V., and Eaglesham, D. J. (Mater. Res. Soc. Symp. Proc. 317, Pittsburgh, PA, 1994), p. 603.Google Scholar
5.Meng, Z. G., Jin, Z. H., Gururaj, B. A., Chu, P., Hoi, H. S., and Wong, M., J. Elecrochem. Soc. 144 (4), 1423 (1997).CrossRefGoogle Scholar
6.Barrett, C. R., Nix, W. D., and Tetelman, A. S., The Principles of Engineering Materials, 1st ed. (Prentice-Hall, Inc., Englewood Cliffs, NJ, 1973).Google Scholar
7.Cao, M., King, T. J., and Saraswat, K. C., Appl. Phys. Lett. 61 (6), 672 (1992).CrossRefGoogle Scholar
8.Labusch, R. and Luedecke, J., Philos. Mag. B 64 (4), 463 (1991).Google Scholar