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Nucleation and initial growth of diamond film on Si substrate

Published online by Cambridge University Press:  03 March 2011

N. Jiang ,
B.W. Sun ,
Z. Zhang  and
Z. Lin
N. Jiang
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, P. O. Box 2724, 100080 Beijing, China, and Dalian University of Science and Technology, Dalian, China
B.W. Sun
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing, China
Z. Zhang*
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, P. O. Box 2724, 100080 Beijing, China
Z. Lin
Affiliation:
Institute of Physics, Chinese Academy of Sciences, Beijing, China
*
a)Address all correspondence to this author.
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Abstract

A high resolution electron microscopic (HREM) study of interface structure between diamond film and its silicon substrate is presented. The HREM images reveal that there is an amorphous intermediate layer between the diamond film and its substrate for samples grown by hot filament chemical vapor deposition (HF-CVD). In some cases, β-SiC crystallites and a few graphite microcrystallites may be embedded in this amorphous layer. The HREM images obtained from cross-sectional specimens reveal that the diamond crystallites nucleate directly either on the amorphous intermediate layer, at diamond seed crystallites that were left during pretreatment of Si substrate by diamond paste,β-SiC particles, or at some scratches of the Si substrate. HREM images also reveal that the quantity, distribution, and the size of β-SiC particles in the intermediate layer are different for different processes. Some β-SiC crystallites have certain orientation relationships with the Si substrate. A HREM study of cross-sectional specimens indicates that twins and microtwins in the HF-CVD diamond film are formed during nucleation of the film either from diamond seeds, β-SiC crystallites, or the amorphous intermediate layer. Multiple twins formed from different β-SiC crystallites have also been observed. High densities of “V” shaped microtwins formed during the initial growth of the diamonds and the formation mechanism of these twins are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 10 , October 1994 , pp. 2695 - 2702
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Ma, G-H. M., Lee, Y. H., and Glass, J. T., J. Mater. Res. 5, 2367 (1990).Google Scholar
2Williams, B. E. and Glass, J. T., J. Mater. Res. 4, 373 (1989).Google Scholar
3Kobayashi, K., Karasawa, S., and Watanabe, T., J. Cryst. Growth 99, 1211 (1990).Google Scholar
4Turner, K. F., Stoner, B. R., Bergmain, L., Glass, J. T., and Nemanich, R. J., J. Appl. Phys. 69, 6400 (1991).CrossRefGoogle Scholar
5Singh, J. and Vellaikal, M., J. Appl. Phys. 73, 2831 (1993).CrossRefGoogle Scholar
6Iijima, S., Aikawa, Y., and Baba, K., J. Mater. Res. 6, 1491 (1991).Google Scholar
7Lawsaki, N. and Hirabayashi, K., J. Appl. Phys. 69, 6361 (1991).Google Scholar
8Brully, J., Zhang, Z., and Williams, D. B., submitted to 13th ICEM, Paris (1994).Google Scholar
9Stoner, B. R. and Glass, J. T., Appl. Phys. Lett. 60, 698 (1992).Google Scholar
10Pickrell, D. J., Zhu, W. T., Badzian, A. R., Newnham, R. E., and Messier, R., J. Mater. Res. 6, 1264 (1991).CrossRefGoogle Scholar
11Denning, P. A. and Stevenson, D. A., Appl. Phys. Lett. 59, 1562 (1991).Google Scholar
12Denning, P. A., Shiomi, H., and Stevenson, D. A., Thin Solid Films 63, 212 (1992).Google Scholar
13Shechtman, D., Hutchison, J. L., Robins, L. H., Farabaugh, E. N., and Feldman, A., J. Mater. Res. 8, 473 (1993).CrossRefGoogle Scholar
14Angus, J. C., Sunkara, M., Sahaida, S. R., and Glass, J. T., J. Mater. Res. 7, 3001 (1992).Google Scholar
15Sun, B. W., Zhang, X. P., and Lin, Z., Phys. Rev. B 47, 9816 (1993).Google Scholar