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Nonlinear silicon oxide growth patterns in a gold-silicon system

Published online by Cambridge University Press:  31 January 2011

Gervais Leclerc ,
Louis Paquin  and
Fabrice Baratay
Gervais Leclerc
Affiliation:
L.I.S.E., Facultés Universitaires Notre-Dame de la Paix, Namur, B-5000 Belgique
Louis Paquin
Affiliation:
Centre de recherche en microélectronique, Université de Sherbrooke, 2500, boul. Université, Sherbrooke, Québec, Canada J1K 2R1
Fabrice Baratay
Affiliation:
Centre de recherche en microélectronique, Université de Sherbrooke, 2500, boul. Université, Sherbrooke, Québec, Canada J1K 2R1
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Abstract

Oxide films are grown on a silicon wafer at low temperatures through the catalytic action of a thin gold film. Our results indicate that the oxide film thickness and morphology vary with the initial gold film thickness but do not significantly depend on the temperature. A Fourier analysis of the film structure suggests that the growth mechanism may include a spinodal decomposition where a binary alloy undergoes a phase separation. It is argued that gold silicide is the most likely candidate for spinodal decomposition.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 9 , September 1992 , pp. 2458 - 2464
Copyright
Copyright © Materials Research Society 1992

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