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Nitrogen diffusion in the Si growth on GaN by low-pressure chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

P. Chen ,
Y. D. Zheng ,
S. M. Zhu ,
D. J. Xi ,
Z. M. Zhao ,
S. L. Gu ,
P. Han  and
R. Zhang
P. Chen*
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y. D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
S. M. Zhu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
D. J. Xi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Z. M. Zhao
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
S. L. Gu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
P. Han
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
*
a)Address all correspondence to this author.[email protected]
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Abstract

Si film has been grown on a wurtzite gallium nitride layer on sapphire by low-pressure chemical vapor deposition. Uniform nitrogen incorporation was found in the Si film at the concentration of 5%, indicating an incorporation-limited process through interstitial diffusion from GaN layer to Si layer. The nitrogen occupied the substitutional sites in the Si film, leading this Si layer to be n-type doping with the carrier concentration of 1.42 × 1018/cm3 and the hall mobility of 158 cm2/(V s). This is consistent with other calculated and experimental results, which suggest that only 5% nitrogen can occupy the substitutional sites in the nitrogen-doped Si materials.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 8 , August 2002 , pp. 1881 - 1883
Copyright
Copyright © Materials Research Society 2002

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