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Nitrate-based metalorganic deposition of CeO2 on yttria-stabilized zirconia

Published online by Cambridge University Press:  01 January 2006

D.E. Wesolowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
M.J. Cima*
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

An aqueous nitrate metalorganic deposition (MOD) process was used to form a 30-nm-thick c-axis-textured ceria (CeO2) layer on a yttria-stabilized zirconia (YSZ) single-crystal substrate. X-ray diffraction showed the CeO2 layer was an (001) oriented film with a ω-scan full width at half-maximum of 1.47°. The average roughness of the ceria films, measured by atomic force microscopy, was about 5 nm. Critical current densities of up to 3.6 × 106 A/cm2 were measured on a 0.35-μm Ba2YCu3O7−x (YBCO) layer deposited over this cap layer using a trifluoroacetate (TFA)-based MOD ex situ process. The physical vapor deposition-derived ceria cap layer used in the most common coated conductor buffer layer stacks may be replaced by such a MOD processed film.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2006

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