Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-27T01:41:39.532Z Has data issue: false hasContentIssue false

A new synthesis of β'-SiAION using the vapor phase technique reduction of kaolin

Published online by Cambridge University Press:  03 March 2011

A. Seron
Affiliation:
CRMD, UMR CNRS-Université, 1b Rue de la Férollerie, 45071 Orléans Cedex 02, France
F. Béguin
Affiliation:
CRMD, UMR CNRS-Université, 1b Rue de la Férollerie, 45071 Orléans Cedex 02, France
J. Thébault
Affiliation:
SEP, les cinq chemins, le Haillan, BP 37, 33165 St Médard en Jalles, France
Get access

Abstract

Silicon-aluminum oxynitrides and/or aluminum nitride were prepared by the reduction-nitridation of kaolin in graphite crucibles under hydrogen/nitrogen flow at temperatures in the range 1100 °C–1450 °C. Almost pure β'-SiAION was obtained in less than 24 h at 1200 °C. At high temperatures (e.g., 1450 °C) and for long reaction times (e.g., 10 h), β'-SiAION is fully reduced to AlN. In most preparations, β'-SiAION is formed together with small amounts of AlN. However, the formation of AlN can be limited by using short reaction times and/or by adjusting the reducing power of the atmosphere, i.e., the N2/H2 ratio. Compared to the carboreduction of aluminosilicates which always yields mixtures, the present method leads to almost pure products under appropriate conditions. The temperature for the formation of β'-SiAION is at least 200 to 400 °C lower than the temperatures used for the carboreduction of aluminosilicates or sintering of powders, respectively. A gaseous species formed by the reaction of hydrogen with graphite is suspected to be responsible for the nitriding reduction of kaolinite.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tassot, P., Rev. Métall., 165 (1988).CrossRefGoogle Scholar
2Jack, K. H., J. Mater. Sci. 11, 1135 (1976).CrossRefGoogle Scholar
3Lee, J. G. and Cutler, I. B., Ceram. Bull. 54, 195 (1975).Google Scholar
4Sugahara, Y., Kuroda, K., and Kato, C., communication to the American Ceramic Society (1984), p. 247.Google Scholar
5Seron, A., Béguin, F., and Bergaya, F., Mater. Sci. Forum 91–93, 265 (1992).CrossRefGoogle Scholar
6Lee, H. L., Lim, H. J., Kim, S., and Lee, H. B., J. Am. Ceram. Soc. 72, 1458 (1989).CrossRefGoogle Scholar
7Dervisbegovic, H. and Riley, F. L., J. Mater. Sci. 16, 1945 (1981).CrossRefGoogle Scholar
8Wild, S., J. Mater. Sci. 11, 1972 (1976).CrossRefGoogle Scholar
9Hanna, S. B. and Ghoneim, N. M., Interceram. 5, 42 (1986).Google Scholar
10Hoch, M. and Nair, K. M., Ceram. Bull. 58, 191 (1979).Google Scholar
11Shick, H. L., Chem. Rev. 60, 331 (1960).CrossRefGoogle Scholar
12Duncan, J. F., Mackenzie, K. J. D., and Foster, P. K., J. Am. Ceram. Soc. 52, 74 (1969).CrossRefGoogle Scholar
13Kooli, F., Ph.D. Thesis, Orléans, France (1989).Google Scholar
14Weiss, J., Ann. Rev. Mater. Sci. 11, 381 (1981).CrossRefGoogle Scholar
15Higgins, I. and Hendry, A., Br. Ceram. Trans. J. 85, 161 (1986).Google Scholar