Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-23T11:33:46.805Z Has data issue: false hasContentIssue false
  • English
  • Français

Near-interface characterization of diamond films on silica and silicon

Published online by Cambridge University Press:  31 January 2011

D.J. Pickrell ,
W. Zhu ,
A.R. Badzian ,
R.E. Newnham  and
R. Messier
D.J. Pickrell
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
W. Zhu
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
A.R. Badzian
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
R.E. Newnham
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Get access

Abstract

The near-interface structure of diamond films grown from a methane and hydrogen gas mixture by microwave plasma enhanced chemical vapor deposition has been studied. Freestanding diamond films grown on both silica and silicon at two different methane concentrations were analyzed by scanning and transmission electron microscopies, electron diffraction, Raman spectroscopy, and secondary ion mass spectroscopy. It was found that the substrate chemistry greatly influenced the nature of the carbon initially deposited on the substrate surface. Diamond formed large flat contact areas on silicon, whereas on silica a particulate type of intermediate layer formed first because of the chemical reactions occurring on and/or with the surface. It was found that the phase content of the films was greatly affected by the methane concentration in hydrogen. At the low (1.0% or less) methane concentrations in hydrogen, phase pure diamond formed; while at the high (5.0%) methane concentration in hydrogen, graphite and disordered carbon were codeposited along with diamond during the early growth stages. Silicon carbide was detected at the diamond interfaces which appeared in discrete areas on silica as opposed to a rather continuous layer as is believed to form on silicon.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 6 , June 1991 , pp. 1264 - 1277
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Angus, J. C. and Hayman, C. C., Science 241, 943 (1988).CrossRefGoogle Scholar
2.Spear, K. E., J. Am. Ceram. Soc. 72, 171 (1989).CrossRefGoogle Scholar
3.Badzian, A. R., Badzian, T., Roy, R., Messier, R., and Spear, K., Mater. Res. Bull. XXIII, 531 (1989).Google Scholar
4.Pickrell, D. J., Ph.D. Thesisin Solid State Science, The Pennsylvania State University, University Park, PA (December 1990).Google Scholar
5.Wada, N. and Solin, S. A., Physica 105B, 353 (1981).Google Scholar
6.Tuinstra, F. and Koening, J. L., J. Chem. Phys. 53, 1126 (1970).CrossRefGoogle Scholar
7.Zhu, W., Wang, X. H., Badzian, A. R., and Messier, R., in New Diamond Science and Technology (Mater. Res. Soc. Symp. Proc. 2nd Int. Conf., Pittsburgh, PA, 1990), NDST–2.Google Scholar
8.Williams, B. E., Glass, J. T., Davis, R. F., Kobashi, K., and Kawate, Y., in Extended Abstracts No. 15, Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. H., Badzian, A. R., and Geis, M. W. (Materials Research Society, Pittsburgh, PA, 1988), p. 59.Google Scholar
9.Belton, D. N., Harris, S. J., Schmieg, S. J., Weiner, A. M., and Perry, T. A., Appl. Phys. Lett. 54, 416 (1988).CrossRefGoogle Scholar
10.Meilunas, R., Wong, M. S., Sheng, K. C., and Chang, R. P. H., Appl. Phys. Lett. 54, 2204 (1989).CrossRefGoogle Scholar
11.Bachmann, P. K., Drawl, W., Knight, D., Weimer, R., and Messier, R., in Extended Abstracts No. 15, Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. H., Badzian, A. R., and Geis, M. W. (Materials Research Society, Pittsburgh, PA, 1988), p. 99.Google Scholar
12.Badzian, A. R., in Advances in X-Ray Analysis, edited by Barrett, C. B., Gilfrich, J. V., Jenkins, R., Russ, J. C., Richardson, J. W., Jr., and Predecki, P. K. (Plenum Press, New York, 1988), Vol. 31, p. 113.CrossRefGoogle Scholar
13.Joffreau, P. O., Haubner, R., and Lux, B., in Extended Abstracts No. 15, Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G. H., Badzian, A. R., and Geis, M. W. (Materials Research Society, Pittsburgh, PA, 1988), p. 15.Google Scholar
14.Benson, P. M., Spear, K. E., and Pantano, C. G., Ceram. Eng. Sci. Proc. 9, 663 (1988).CrossRefGoogle Scholar
15.Spear, K. E., Benson, P. M., and Pantano, C. G., in Proc. 4th Symp. on High Temperature Materials Chemistry, edited by Munir, Z. A., Cubicciotti, D., and Tagawa, H. (The Electrochemical Society, Pennington, NJ, 1988), p. 345Google Scholar