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N-doped polymer-derived Si(N)OC: The role of the N-containing precursor

Published online by Cambridge University Press:  24 February 2015

Van Lam Nguyen*
Affiliation:
Department of Industrial Engineering, University of Trento, Trento 38123, Italy
Nadhira Bensaada Laidani
Affiliation:
Fondazione Bruno Kessler, Centro Materiali e Microsistemi, Plasma, Advanced Materials and Surface Engineering (PAM-SE), Trento 38123, Italy
Gian Domenico Sorarù
Affiliation:
Department of Industrial Engineering, University of Trento, Trento 38123, Italy
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Polymer precursors for Si(N)OC ceramics have been synthesized by hydrosilylation reaction of polyhydridomethylsiloxane (PHMS) with three different nitrogen containing compounds. The results obtained by combining characterization techniques such as FTIR, 13C- and 29Si-NMR confirm the occurrence of the cross-linking reaction between Si–H and vinyl groups. The structural characterization of the corresponding ceramic phase shows that the type of N-containing compounds strongly influences the pyrolytic transformation as well as the crystallization behavior of the final ceramics. Elemental analysis clearly indicates that N is present in the Si(N)OC matrix and the degree of N retention after pyrolysis is related to the type of N-containing starting compound. XPS data show that N–C bonds are present in the Si(N)OC ceramic samples even if only N–Si bonds are present in the starting N-containing precursors. However, if nitrogen atoms form bonds with sp2 carbon atoms in the preceramic polymer then a larger fraction of C–N bonds is retained in the final Si(N)OC ceramic.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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References

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