Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-26T05:32:01.516Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanowires formed in anodic oxide nanotemplates

Published online by Cambridge University Press:  03 March 2011

D. Al-Mawlawi ,
C. Z. Liu  and
Martin Moskovits
D. Al-Mawlawi
Affiliation:
Department of Chemistry and The Ontario Laser and Lightwave Research Centre, University of Toronto, M5S 1A1, Toronto, Canada
C. Z. Liu
Affiliation:
Department of Chemistry and The Ontario Laser and Lightwave Research Centre, University of Toronto, M5S 1A1, Toronto, Canada
Martin Moskovits
Affiliation:
Department of Chemistry and The Ontario Laser and Lightwave Research Centre, University of Toronto, M5S 1A1, Toronto, Canada
Get access

Abstract

A simple electrochemical method is described for producing metal or semiconductor nanowires with diameters in the continuous range 10 to 200 nm. The technique involves a three-step process that begins with the electrochemical generation of an aluminum oxide template with uniform nanometer-sized pores, followed by the deposition of metal or semiconductor in them. The nanowires are then exposed for study or device fabrication by etching back the oxide matrix. Examples of cadmium nanowires fabricated by this technique are shown.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 4 , April 1994 , pp. 1014 - 1018
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Science 254, Nov. 29 (1991).Google Scholar
2(a) Proc. Farad. Symp. 25, J. Chem. Soc. Farad. Trans. 86 (13) (1990). (b) Elemental and Molecular Clusters, edited by Benedek, G., Martin, T. P., and Pacchioni, G. (Springer, Berlin, 1987). (c) Large Finite Systems, edited by Jortner, J., Pullman, A., and Pullman, B. (Reidel, Dordrecht, 1987). (d) Metal Clusters, edited by Moskovits, M. (John Wiley, New York, 1986). (e) Metal Clusters, edited by Träger, M. and ZuPutlitz, F. (Springer, Berlin, 1986). (f) Farad. Disc. Chem. Soc, No. 86 (1988).Google Scholar
3Nanostructure Physics and Fabrication, Proc. Int. Symp., College Station, TX, March 1989, edited by Reed, M.A. and Kirk, W. P. (Academic Press, New York, 1989); Science and Engineering of One-and Zero-dimensional Semiconductors, edited by Beaumont, S. P. and Sotomayor Torres, C. M., NATO-ASI Ser. B. (Plenum, New York, 1990), Vol. 214.Google Scholar
4Steigerwald, M. L. and Brus, L. E., Ann. Rev. Mater. Sci. 19, 471 (1989); Goldstein, A. N., Echer, C. M., and Alivisatos, A. P., Science 256, 1425 (1992); Bawendi, M. G., Carroll, P. J., Wilson, W. J., and Brus, L. E., J. Chem. Phys. 96, 946 (1992).CrossRefGoogle Scholar
5Ozin, G. A., Adv. Mater. 4, 612 (1992); Breck, D. W., Zeolite Molecular Sieves (Krieger, Malabar, 1984).CrossRefGoogle Scholar
6Diggle, J. W., Downie, T. C., and Goulding, C. W., Chem. Rev. 69, 365 (1969); Thompson, G. E. and Wood, G. C., in Treatise on Materials Science and Technology, edited by Scully, J. C. (Academic Press, New York, 1983), Vol. 23, Ch. 5 and references therein.CrossRefGoogle Scholar
7O'Sullivan, J. P. and Wood, G. C., Proc. R. Soc. London A 317, 511 (1970); Furneaux, R. C., Trans. Inst. Metal Finish. 61 (1983); Furneaux, R. C., Thompson, G. E., and Wood, G. C., Corros. Sci. 18, 853 (1978).Google Scholar
8(a) Brace, A. W. and Sheasby, P. G., Technicopy, Stonehouse, 197 (1979). (b) Sandera, L., Aluminum 49, 533 (1973). (c) Sautter, W., Ibe, G., and Meier, J., Aluminum 50, 143 (1974). (d) Doughty, A. S., Thompson, G. E., Richardson, J. A., and Wood, G. C., Trans. Inst. Metal Finish. 53, 33, 161 (1975). (e) Goad, D. G. W. and Moskovits, M., J. Appl. Phys. 49, 2929 (1978). (f) Preston, C. K. and Moskovits, M., J. Phys. Chem. 92, 2957 (1988).Google Scholar
9Al-Mawlawi, D., Coombs, N., and Moskovits, M., J. Appl. Phys. 70, 979 (1991).Google Scholar
10Al-Mawlawi, D., Moskovits, M., Ellis, D. S., Williams, A., and Xu, J. M., Proc. Int. Semicond. Dev. Res. Symp., University of Virginia (in press).Google Scholar