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Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Published online by Cambridge University Press:  31 January 2011

Zhi-Hui Xu ,
Young-Bae Park  and
Xiaodong Li
Zhi-Hui Xu
Affiliation:
Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29208
Young-Bae Park
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125
Xiaodong Li*
Affiliation:
Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29208
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.

Keywords

Ion implantationTribology
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 5 , May 2010 , pp. 880 - 889
Copyright
Copyright © Materials Research Society 2010

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References

REFERENCES

1.Bhushan, B., Li, X.D.Micromechanical and tribological characterization of doped single-crystal silicon and polysilicon films for microelectromechanical systems devices. J. Mater. Res. 12, 54 (1997)CrossRefGoogle Scholar
2.Bhushan, B., Gupta, B.K.Handbook of Tribology: Materials, Coating, and Surface Treatments (McGraw-Hill, New York 1991)Google Scholar
3.Szabadi, M., Hess, P., Kellock, A.J., Coufal, H., Baglin, J.E.E.Elastic and mechanical properties of ion-implanted silicon determined by surface-acoustic-wave spectrometry. Phys. Rev. B 58, 8941 (1998)CrossRefGoogle Scholar
4.Sun, R., Xu, T., Xue, Q.J.Effect of Ar+ ion implantation on the nano-mechanical properties and microstructure of single crystal silicon. Appl. Surf. Sci. 249, 386 (2005)CrossRefGoogle Scholar
5.Kodali, P., Hawley, M., Walter, K.C., Hubbard, K., Yu, N., Tesmer, J.R., Levine, T.E., Nastasi, M.Tribological properties of carbon- and nitrogen-implanted Si (100). Wear 205, 144 (1997)CrossRefGoogle Scholar
6.Ueda, M., Lepienski, C.M., Rangel, E.C., Cruz, N.C., Dias, F.G.Nanohardness and contact angle of Si wafers implanted with N and C and Al alloy with N by plasma ion implantation. Surf. Coat. Technol. 156, 190 (2002)CrossRefGoogle Scholar
7.Chu, P.K.Contamination issues in hydrogen plasma immersion ion implantation of silicon—A brief review. Surf. Coat. Technol. 156, 244 (2002)CrossRefGoogle Scholar
8.Ovsyannikov, S.V., Shchennikov, V.V., Antonova, I.V., Shchennikov, V.V. Jr, Ponosov, Y.S.Effect of hydrogen implantation on semiconductor-metal transition and high-pressure thermopower in Si. Mater. Sci. Eng., A 462, 343 (2007)CrossRefGoogle Scholar
9.Ueda, M., Beloto, A.F., Reuther, H., Parascandola, S.Plasma immersion ion implantation of nitrogen in Si: Formation of SiO2, Si3N4 and stressed layers under thermal and sputtering effects. Surf. Coat. Technol. 136, 244 (2001)CrossRefGoogle Scholar
10.Swadener, J.G., Nastasi, M.Increasing the fracture toughness of silicon by ion implantation. Nucl. Instrum. Methods Phys. Res., Sect. B 206, 937 (2003)CrossRefGoogle Scholar
11.Oliviero, E., Peripolli, S., Amaral, L., Fichtner, P.F.P., Beaufort, M.F., Barbot, J.F., Donnelly, S.E.Damage accumulation in neon implanted silicon. J. Appl. Phys. 100, 043505 (2006)CrossRefGoogle Scholar
12.Mishra, P., Bhattacharyya, S.R., Ghose, D.Nanoindentation on single-crystal Si modified by 100 keV Cr+ implantation. Nucl. Instrum. Methods Phys. Res., Sect. B 266, 1629 (2008)CrossRefGoogle Scholar
13.Nagy, P.M., Aranyi, D., Horvath, P., Peto, G., Kalman, E.Nanomechanical properties of ion-implanted Si. Surf. Interface Anal. 40, 875 (2008)CrossRefGoogle Scholar
14.Stopping and Range of Ions in Matterhttp://www.srim.org/Google Scholar
15.Simionescu, A., Hobler, G., Bogen, S., Frey, L., Ryssel, H.Model for the electronic stopping power of channeled ions in silicon around the stopping power maximum. Nucl. Instrum. Methods Phys. Res., Sect. B 106, 47 (1995)CrossRefGoogle Scholar
16.Chen, X., Vlassak, J.A numerical study on the measurements of thin film mechanical properties by means of nanoindentation. J. Mater. Res. 16, 2974 (2001)CrossRefGoogle Scholar
17.Xu, Z.H., Rowcliffe, D.Finite element analysis of substrate effects on indentation behavior of thin films. Thin Solid Films 447–448, 399 (2004)CrossRefGoogle Scholar
18.Oliver, W.C., Pharr, G.M.An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J. Mater. Res. 7, 1564 (1992)CrossRefGoogle Scholar
19.Xu, Z.H., Li, X.D.Effects of indenter geometry and material properties on the correction factor of Sneddon's relationship for nanoindentation of elastic and elastic-plastic materials. Acta Mater. 56, 1399 (2008)CrossRefGoogle Scholar
20.Lawn, B.R., Evans, A.G., Marshall, D.B.Elastic/plastic indentation damage in ceramics: The median/radial crack system. J. Am. Ceram. Soc. 63, 574 (1980)CrossRefGoogle Scholar
21.Franca, D.R., Blouin, A.All-optical measurement of in-plane and out-of-plane Young's modulus and Poisson's ratio in silicon wafers by means of vibration modes. Meas. Sci. Technol. 15, 859 (2004)CrossRefGoogle Scholar
22.Follstaedt, D.M., Knapp, J.A., Myers, S.M.Mechanical properties of ion-implanted amorphous silicon. J. Mater. Res. 19, 338 (2004)CrossRefGoogle Scholar
23.Brault, P., Ranson, P., Estrade-Szwarckopf, H., Rousseau, B.Chemical physics of fluorine plasma-etched silicon surfaces: Study of surface contaminations. J. Appl. Phys. 68, 1702 (1990)CrossRefGoogle Scholar
24.Rats, D., Vandenbulcke, L., Herbin, R., Benoit, R., Erre, R., Serin, V., Sevely, J.Characterization of diamond films deposited on titanium and its alloys. Thin Solid Films 270, 177 (1995)CrossRefGoogle Scholar
25.Chen, L.C., Yang, C.Y., Bhusari, D.M., Chen, K.H., Lin, M.C., Chuang, T.J.Formation of crystalline silicon carbon nitride films by microwave plasma-enhanced chemical vapor deposition. Diamond Relat. Mater. 5, 514 (1996)CrossRefGoogle Scholar
26.Chourasia, A.R.Core level XPS spectra of silicon carbide using zirconium and magnesium radiations. Surf. Sci. Spectra 8, 45 (2001)CrossRefGoogle Scholar
27.Kubler, L., Bischoff, J.L., Bolmont, D.General comparison of the surface processes involved in nitridation of Si (100)-2X1 by NH3 and in SiNx film deposition: A photoemission study. Phys. Rev. B 38, 13113 (1988)CrossRefGoogle Scholar
28.Adachi, S., Mori, H., Takahashi, M.Model-dielectric-function analysis of ion-implanted Si (100) wafers. J. Appl. Phys. 93, 115 (2003)CrossRefGoogle Scholar
29.Paramanik, D., Dey, S., Granesan, V., Varma, S.Shape transition of nanostructures created on Si (100) surface after MeV implantation. Nucl. Instrum. Methods Phys. Res., Sect. B 244, 74 (2006)CrossRefGoogle Scholar
30.Mori, H., Adachi, S., Takahashi, M.Optical properties of self-ion-implanted Si (100) studied by spectroscopic ellipsometry. J. Appl. Phys. 90, 87 (2001)CrossRefGoogle Scholar
31.Kuri, G., Yang, T.R.MeV Al+ and Al2+ ions implantation in Si (100): Surface roughness and defects in the bulk. Appl. Phys. A 79, 443 (2000)CrossRefGoogle Scholar
32.Tsunoda, K., Adachi, S., Takahashi, M.Spectroscopic ellipsometry study of ion-implanted Si (100) wafers. J. Appl. Phys. 91, 2936 (2002)CrossRefGoogle Scholar
33.Leyland, A., Matthews, A.On the significance of the H/E ratio in wear control: A nanocomposite coating approach to optimized tribological behaviour. Wear 240, 1 (2000)CrossRefGoogle Scholar
34.Shi, B., Sullivan, J.L., Beake, B.D.An investigation into which factors control the nanotribological behaviour of thin sputtered carbon films. J. Phys. D: Appl. Phys. 41, 045303 (2008)CrossRefGoogle Scholar
35.Li, X.D., Bhushan, B., Takashima, K., Baek, C.W., Kim, Y.K.Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques. Ultramicroscopy 97, 481 (2003)CrossRefGoogle ScholarPubMed
36.Li, X.D., Bhushan, B.Micro/nanomechanical and tribological studies of bulk and thin-film materials used in magnetic recording heads. Thin Solid Films 398–399, 313 (2001)CrossRefGoogle Scholar
37.Jensen, H., Jensen, U.M., Sorensen, G.Reactively sputtered Cr nitride coatings studies using the acoustic emission scratch test technique. Surf. Coat. Technol. 74–75, 297 (1995)CrossRefGoogle Scholar
38.Cho, S.S., Komvopoulos, K.Correlation between acoustic emission and wear of multi-layer ceramic coated carbide tools. Trans. ASME 119, 238 (1997)Google Scholar
39.Cho, C.W., Lee, Y.Z.Wear-life evaluation of CrN-coated steels using acoustic emission signals. Surf. Coat. Technol. 127, 59 (2000)CrossRefGoogle Scholar
40.Fischer, T.E., Zhu, Z., Kim, H., Shin, D.S.Genesis and role of wear debris in sliding wear of ceramics. Wear 245, 53 (2000)CrossRefGoogle Scholar