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Nanoindentation cracking in gallium arsenide: Part II. TEM investigation

Published online by Cambridge University Press:  22 October 2013

Cédric Pouvreau ,
Kilian Wasmer ,
Haïcha Hessler-Wyser ,
Jean-Daniel Ganière ,
Jean-Marc Breguet ,
Johann Michler ,
Daniel Schulz  and
Jacques Henri Giovanola
Cédric Pouvreau
Affiliation:
Empa, Swiss Laboratories for Materials Science and Technology, Laboratory for Advanced Materials Processing, 3602 Thun, Switzerland; and Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory for Mechanical Systems Design, CH-1015 Lausanne, Switzerland
Kilian Wasmer*
Affiliation:
Empa, Swiss Laboratories for Materials Science and Technology, Laboratory for Advanced Materials Processing, 3602 Thun, Switzerland
Haïcha Hessler-Wyser
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory for Mechanical Systems Design, CH-1015 Lausanne, Switzerland
Jean-Daniel Ganière
Affiliation:
Empa, Swiss Laboratories for Materials Science and Technology, Laboratory for Advanced Materials Processing, 3602 Thun, Switzerland
Jean-Marc Breguet
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory for Mechanical Systems Design, CH-1015 Lausanne, Switzerland
Johann Michler
Affiliation:
Empa, Swiss Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, 3602 Thun, Switzerland
Daniel Schulz
Affiliation:
Department Advanced Technologies, Bookham AG, CH-8045 Zürich, Switzerland
Jacques Henri Giovanola
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory for Mechanical Systems Design, CH-1015 Lausanne, Switzerland
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The nanoindentation fracture behavior of gallium arsenide (GaAs) is examined from two perspectives in two parent papers. In the first paper (part I), we address the morphology of the crack field induced by different types of indenters by means of in situ nanoindentation inside a scanning electron microscope (SEM) and of cleavage cross-sectioning techniques. In the present paper (part II), we investigate the early stage of crack nucleation under wedge nanoindentation through cathodoluminescence and transmission electron microscopy. We find that the apex angle of the wedge indenter influences the dislocation microstructure and, as a consequence, the mechanism of crack nucleation under nanoindentation. The formation of microtwins depends on both the orientation of the indenter with respect to the orientation of the GaAs crystal and on the apex angle of the indenter. For dicing applications of GaAs wafers, it is desirable to have an opening angle of the indenter smaller than 70° to facilitate the formation of precursor cracks.

Keywords

nanoindentationGaAsfracturetransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 20 , 28 October 2013 , pp. 2799 - 2809
Copyright
Copyright © Materials Research Society 2013 

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References

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