Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-23T02:55:22.288Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanofabrication of top-gated carbon nanotube-based transistors: Probing electron-electron interactions in one-dimensional systems

Published online by Cambridge University Press:  03 March 2011

J.A. Sulpizio ,
Z.Z. Bandić  and
D. Goldhaber-Gordon
J.A. Sulpizio*
Affiliation:
Department of Physics, Stanford University, Stanford, California 94305
Z.Z. Bandić
Affiliation:
Hitachi San Jose Research Center, San Jose, California 95120
D. Goldhaber-Gordon
Affiliation:
Department of Physics, Stanford University, Stanford, California 94305
*
a) Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Carbon nanotubes are interesting for studying the remarkable electronic properties of one-dimensional (1D) quantum systems. Electron flow in such systems is not described by Fermi liquid theory—restricted dimensionality leads to the appearance of collective excitations—or Luttinger liquid behavior. Previous studies have probed Luttinger liquid behavior by tunneling into or between one-dimensional systems. We propose to extend these studies by using narrow top gates to introduce tunable tunnel barriers within nanotubes. We report on the scalable fabrication of carbon nanotube-based transistors with nanowire top gates. We have used electron-beam lithography (EBL) to create single-walled carbon nanotube (SWNT) transistors with source-drain spacings down to 200 nm and with sub-30 nm metal top gates for creating tunable tunnel barriers. The top metal gate is isolated from the nanotube by a thin aluminum oxide layer deposited by atomic layer deposition. We fabricated chips with 100 devices using multiple electron-beam lithography alignment steps and achieved overall placement better than 30 nm. The details of top-gated SWNT transistor fabrication are presented, and initial transport measurements on fabricated devices are discussed.

Keywords

DevicesLithography
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 11 , November 2006 , pp. 2916 - 2921
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Bockrath, M., Cobden, D.H., Lu, J., Rinzler, A.G., Smalley, R.E., Balents, L., McEuen, P.L.: Luttinger-liquid behaviour in carbon nanotubes. Nature 397, 598 (1999).CrossRefGoogle Scholar
2.Yao, Z., Postma, H.W.Ch., Balents, L., Dekker, C.: Carbon nanotube intramolecular junctions. Nature 402, 273 (1999).CrossRefGoogle Scholar
3.Biercuk, M.J., Garaj, S., Mason, N., Chow, J.M., Marcus, C.M.: Gate-defined quantum dots on carbon nanotubes. Nano Lett. 5, 1267 (2005).CrossRefGoogle ScholarPubMed
4.Javey, A., Kim, H., Brink, M., Wang, Q., Ural, A., Guo, J., McIntyre, P., McEuen, P., Lundstrom, M., Dai, H.: High-k dielectrics for advanced carbon-nanotube transistors and logic gates. Nat. Mater. 1, 241 (2002).CrossRefGoogle Scholar
5.Javey, A., Guo, J., Wang, Q., Lundstrom, M., Dai, H.: Ballistic carbon nanotube field-effect transistors. Nature 424, 654 (2003).CrossRefGoogle ScholarPubMed
6.Landau, L.D., Lifshitz, E.M.: Statistical Physics (Pergamon Press Ltd., New York, 1977).Google Scholar
7.Harrison, W.: Solid State Theory (Dover Publications, New York, 1980).Google Scholar
8.Tomonaga, S.: Remarks on Bloch’s method of sound waves applied to many-fermion problems. Prog. Theor. Phys. 5, 544 (1950).CrossRefGoogle Scholar
9.Luttinger, J.M.: An exactly soluble model of a many-fermion system. J. Math. Phys. 4, 1154 (1965).CrossRefGoogle Scholar
10.Giamarchi, T.: Quantum Physics in One Dimension (Oxford Univ. Press, New York, 2004).Google Scholar
11.Schnhammer, K., Meden, V.: Fermion-boson transmutation and comparison of statistical ensembles in one dimension. Am. J. Physiol. 64, 1168 (1996).CrossRefGoogle Scholar
12.Kane, C., Balents, L., Fisher, M.P.A.: Coulomb interactions and mesoscopic effects in carbon nanotubes. Phys. Rev. Lett. 79, 5086 (1997).CrossRefGoogle Scholar
13.Kong, J., Cassell, A.M., Dai, H.: Chemical vapor deposition of methane for singlewalled carbon nanotubes. Chem. Phys. Lett. 292, 567 (1998).CrossRefGoogle Scholar