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Molecular beam epitaxy of dysprosium barium cuprous oxides using molecular oxygen

Published online by Cambridge University Press:  31 January 2011

E.S. Hellman ,
E.H. Hartford  and
E.A. Fitzgerald
E.S. Hellman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
E.H. Hartford
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
E.A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
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Abstract

Epitaxy of cupric oxides, such as the high temperature superconductor YBa2Cu3O7, using “vacuum” techniques requires either activated forms of oxygen, such as atomic oxygen, oxygen plasma, or ozone, or a relatively high pressure of molecular oxygen. In contrast, cuprous oxides (those with formal valence of copper less than +2) can be grown epitaxially in molecular oxygen at pressures below 10−4 Torr. We have explored this regime of epitaxial growth because of the possibility of forming DyBa2Cu3O7 through low temperature ex situ oxidation of DyBa2Cu3O6. We find that the dominant phases growing epitaxially on MgO are CuDyO2, Cu2O, CuBa2O2, DyBa2Cu3O6, and the barium-rich perovskite solid solutions. Sticking coefficients of barium and dysprosium depend on substrate temperature and flux composition for substrate temperatures between 550° and 700 °C. We have obtained superconducting films by annealing Dy-rich, Cu-deficient films in oxygen at 400 °C. The nonstoichiometry (with respect to DyBa2Cu3O6) appears to stabilize “DyBa2Cu3O6,” at low oxygen pressures. We also discuss the use of copper in effusion cells.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 4 , April 1992 , pp. 795 - 800
Copyright
Copyright © Materials Research Society 1992

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