Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-22T21:56:43.632Z Has data issue: false hasContentIssue false
  • English
  • Français

Microwave dielectric properties of Ca[(Li1/3Nb2/3)1−xMx]O3−δ (M = Sn, Ti) ceramics

Published online by Cambridge University Press:  31 January 2011

Ji-Won Choi ,
Chong-Yun Kang ,
Seok-Jin Yoon ,
Hyun-Jai Kim ,
Hyung-Jin Jung  and
Ki Hyun Yoon
Ji-Won Choi
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 130–650, Korea
Chong-Yun Kang
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 130–650, Korea
Seok-Jin Yoon
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 130–650, Korea
Hyun-Jai Kim
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 130–650, Korea
Hyung-Jin Jung
Affiliation:
Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 130–650, Korea
Ki Hyun Yoon
Affiliation:
Department of Ceramic Engineering, Yonsei University, Seoul 120–749, Korea
Get access

Abstract

The microwave dielectric properties of Ca[(Li1/3Nb2/3)1−xMx]O3−δ (M = Sn, Ti, 0 ≤ x ≤ 0.5) ceramics were investigated. In general, the ceramics prepared were multiphase materials. However, single-phase specimens having orthorhombic perovskite structure similar to CaTiO3 could be obtained in the vicinity of Sn = 0.2 to 0.3, and Ti = 0.2. As Sn concentration increased, the dielectric constant (εr) decreased and the quality factor (Q) significantly increased within the limited Sn concentration. As Ti concentration increased, the dielectric constant (εr) increased, the quality factor (Q) decreased, and the temperature coefficient of resonant frequency (τf) changed from a negative to positive value. The temperature coefficient of resonant frequency of 0 ppm/°C was realized at Ti = 0.2. The Q · fo value and εr for this composition were found to be 26100 GHz and 38.6, respectively.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 9 , September 1999 , pp. 3567 - 3570
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Wakino, K., Ferroelectrics 91, 68 (1989).CrossRefGoogle Scholar
2.Pobl, K. and Wolfram, G., Siemens-Components 17, 14 (1982).Google Scholar
3.Wersing, W., Applied Science (Elsevier, London, 1991), p. 67.Google Scholar
4.Plourde, J.K., Linn, D.F., O'Bryan, H.M., and Thomson, J., J. Am. Ceram. Soc. 58(9–10), 418 (1975).CrossRefGoogle Scholar
5.Heiao, Y.C., Wu, L., and Wei, C.C., Mater. Res. Bull. 23, 1687 (1988).CrossRefGoogle Scholar
6.Hakki, B.W. and Coleman, P.D., IRE Trans. Micro. Theory & Tech. 8, 402 (1960).CrossRefGoogle Scholar
7.Kay, H.F. and Bailey, P.C., Acta Cryst. 10, 219 (1957).CrossRefGoogle Scholar
8.Shannon, R.D., Acta Cryst. A32, 75 (1976).Google Scholar
9.Kucheiko, S., Choi, J.W., Kim, H.J., Yoon, S.J., and Jung, H.J., J. Am. Ceram. Soc. 80(11), 2937 (1997).CrossRefGoogle Scholar
10.Kagata, H., Kato, J., Nishimoto, K., and Inoue, T., Jpn. J. Appl. Phys. 32, 4332 (1992).CrossRefGoogle Scholar