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Metal-insulator transition in highly disordered carbon fibers

Published online by Cambridge University Press:  31 January 2011

K. Kuriyama  and
M.S. Dresselhaus
K. Kuriyama*
Affiliation:
Center for Materials Science and Engineering, Departments of Electrical Engineering and Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
M.S. Dresselhaus
Affiliation:
Center for Materials Science and Engineering, Departments of Electrical Engineering and Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
*
a)Permanent address: R & D Division, Sumitomo Metal Industries Ltd., Fuso 1-8, Amagasaki, Hyogo, 660 Japan.
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Abstract

The electronic transition from localized to delocalized states of carriers in a disordered carbon material is investigated by photoconductivity measurements. Phenol-derived activated carbon fibers, where the carriers are strongly localized due to disorder, are heat treated in the range 300–2500 °C to give rise to the insulator-metal transition. Dark conductivity, Raman spectra, and x-ray diffraction patterns are also measured to characterize their structural changes. As a result, the transition temperature was determined to be rather low, around 1000 °C, considering the rapid decrease in the photoconductivity above this temperature. This decrease was ascribed to a fast recombination between the photoexcited carriers and the delocalized carriers generated by heat treatment.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 4 , April 1992 , pp. 940 - 945
Copyright
Copyright © Materials Research Society 1992

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