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Measurement and interpretation of stress in copper films as a function of thermal history

Published online by Cambridge University Press:  31 January 2011

Paul A. Flinn
Paul A. Flinn
Affiliation:
Intel Corporation, SC1–02, 3065 Bowers Avenue, Santa Clara, California 95124 and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
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Abstract

Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 7 , July 1991 , pp. 1498 - 1501
Copyright
Copyright © Materials Research Society 1991

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References

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