Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-23T12:03:35.869Z Has data issue: false hasContentIssue false
  • English
  • Français

Measurement and interpretation of stress in copper films as a function of thermal history

Published online by Cambridge University Press:  31 January 2011

Paul A. Flinn
Paul A. Flinn
Affiliation:
Intel Corporation, SC1–02, 3065 Bowers Avenue, Santa Clara, California 95124 and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
Get access

Abstract

Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 7 , July 1991 , pp. 1498 - 1501
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Klema, J., Pyle, R., and Domangue, E., Proc. 22nd Annual International Reliability Symposium, IEEE, New York, 1984, pp. 1–5.Google Scholar
2.Curry, J., Fitzgibbon, G., Guan, Y., Muollo, R., Nelson, G., and Thomas, A., Proc. 22nd Annual International Reliability Symposium, IEEE, New York, 1984, pp. 6–8.CrossRefGoogle Scholar
3.Yue, J. T., Funsten, W. P., and Taylor, R. V., Proc. 23rd Annual International Reliability Symposium, IEEE, New York, 1985, pp. 126–137.Google Scholar
4.Sugano, Y., Minegishi, S., Sumi, H., and Itabashi, M., Proc. 26th Annual International Reliability Symposium, IEEE, New York, 1988, pp. 34–38.CrossRefGoogle Scholar
5.Tezaki, A., Mineta, T., Egawa, H., and Noguchi, T., Proc. 28th Annual International Reliability Symposium, IEEE, New York, 1990, pp. 221–229.CrossRefGoogle Scholar
6.Flinn, P.A. and Waychunas, G.A., J. Vac. Sci. Technol. B 6, 1749–1755 (1988).CrossRefGoogle Scholar
7.Flinn, P. A., Gardner, D. S., and Nix, W. D., IEEE Trans. Electron Devices ED-34, 689–699 (1987).CrossRefGoogle Scholar
8.Gardner, D. S. and Flinn, P. A., in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J. C., Nix, W. D., Barnett, D. M., and Smith, D.A. (Mater. Res. Soc. Symp. Proc. 130, Pittsburgh, PA, 1989), pp. 69–76.Google Scholar
9.Gardner, D.S. and Flinn, P.A., J. Appl. Phys. 67, 1831–1844 (1990).CrossRefGoogle Scholar
10.Ashby, M. F. and Frost, H. J., in Constitutive Equations in Plasticity, edited by Argon, A. S. (MIT Press, Cambridge, MA, 1975), pp. 117–147.Google Scholar
11.Frost, H. J. and Ashby, M. F., Deformation-mechanism Maps: the Plasticity and Creep of Metals and Ceramics (Pergamon Press, New York, 1982), pp. 6–8.Google Scholar
12.Flinn, P.A. and Chiang, C., J. Appl. Phys. 67, 2927–2931 (1990).CrossRefGoogle Scholar