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The measurement and analysis of epitaxial recrystallization kinetics in ion-beam-amorphized SrTiO3

Published online by Cambridge University Press:  03 March 2011

J. Rankin
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
B.W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
L.A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831–6056
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Abstract

The solid-state epitaxial-regrowth kinetics of ion-beam-amorphized SrTiO3 surfaces annealed in water-vapor-rich atmospheres have been studied using time-resolved reflectivity (TRR). For this material, the conversion of the reflectivity-versus-time data obtained from the TRR measurements to recrystallized depth-versus-time data is more complicated than in systems such as silicon, where the reflectivity can be fit by assuming that the refractive index N (N = n + ik) in the amorphous layer is constant. In SrTiO3, agreement between measurements made directly with Rutherford backscattering spectroscopy (RBS) and those made using TRR can be obtained only when N is permitted to vary within the amorphous layer, with nonzero values for both the real and imaginary components. In some cases, the roughness of the amorphous/crystalline interface must also be considered. Additionally, a model for H2O-enhanced epitaxial regrowth is presented, which is in good agreement with the shape of the depth-versus-time profiles that are obtained from the TRR data.

Type
Articles
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1Rankin, J., McCallum, J.C., and Boatner, L.A., J. Mater. Res. 7, 717 (1992).CrossRefGoogle Scholar
2McCallum, J. C., Rankin, J., Boatner, L. A., and White, C. W., Nucl. Instrum. Methods in Phys. Res. B 46, 98 (1990).CrossRefGoogle Scholar
3Rankin, J., Ph.D. Thesis, Massachusetts Institute of Technology, Materials Science Department (1989).Google Scholar
4McCallum, J.C., Simpson, T. W., Mitchell, I. V., Rankin, J., and Boatner, L. A., in Phase Formation and Modification by Beam-Solid Interactions, edited by Was, G. S., Rehn, L. E., and Follstaedt, D. M. (Mater. Res. Soc. Symp. Proc. 235, Pittsburgh, PA, 1992).Google Scholar
5Simpson, T. W., Mitchell, I. V., McCallum, J. C., and Boatner, L. A., J. Appl. Phys. (in press).Google Scholar
6Dudney, N. J., Bates, J. B., and Wang, J. C., Phys. Rev. B 24(12), 6831 (1981).CrossRefGoogle Scholar
7Olson, G. L. and Roth, J. A., Mater. Sci. Rep. 31(1), 1 (1988).CrossRefGoogle Scholar
8Townsend, P. D., Crystal Latt. Def. and Amorph. Mater. 18, 377 (1989).Google Scholar
9Born, M. and Wolf, E., Principles of Optics, 6th ed. (Pergamon Press, Oxford, U.K., 1980).Google Scholar
10Licoppe, C., Nissim, Y. I., Meriadec, C., and Krauz, P., J. Appl. Phys. 60(4), 1352 (1986).CrossRefGoogle Scholar
11Brent, R. P., Algorithms for Minimization Without Derivatives (Prentice-Hall, Englewood Cliffs, NJ, 1973).Google Scholar
12Crank, J., Mathematics of Diffusion (Oxford University Press, Fair Lawn, NJ, 1956).Google Scholar