Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-20T06:33:13.088Z Has data issue: false hasContentIssue false
  • English
  • Français

Mass transfer and kinetics of the chemical vapor deposition of SiC onto fibers

Published online by Cambridge University Press:  31 January 2011

W. Jack Lackey ,
Sundar Vaidyaraman ,
Bruce N. Beckloff ,
Thomas S. Moss III  and
John S. Lewis
W. Jack Lackey
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
Sundar Vaidyaraman
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
Bruce N. Beckloff
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
Thomas S. Moss III
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
John S. Lewis
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
Get access

Abstract

An internally consistent set of data was generated for the chemical vapor deposition (CVD) of SiC from methyltrichlorosilane (MTS) and H2 at atmospheric pressure. A moving fiber tow was used as the substrate. Coating rates between 0.3 and 3.7 µm/min and deposition efficiencies between 24 and 48% were obtained for MTS and H2 flow rates in the range 30 to 200 cm3/min and 300 to 2000 cm3/min, respectively. The data were analyzed and found to be best fit under a mass transfer regime. Based on this fit, a value of the constant in the Chilton–Colburn j factor expression for a moving fiber tow was estimated to be 2.74 × 10−6 with a standard deviation of 3.2 × 10−7. The efficiency of the reaction was found to decrease with increases in the total flow rate, indicating that the effect of the decreased residence time of reagents in the reactor was larger than the increase in the mass transfer coefficient. Finally, a comparison between the efficiencies for a stationary and a moving tow revealed that the moving tow had a higher efficiency, possibly due to a disruption of the boundary layer by the tow motion or due to the decrease in the canning of the moving tow.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 8 , August 1998 , pp. 2251 - 2261
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Pysher, D. J., Goretta, K. C., Hodder, R. S., and Tressler, R. E., J. Am. Ceram. Soc. 72, 284–288 (1989).CrossRefGoogle Scholar
2.Fitzer, E., Kehr, D., Morin, D., and Sahebkar, M., in Proceedings of the Fifth International Conference on Chemical Vapor Deposition, edited by Blocher, J. M., Jr., Hintermann, H. E., and Hall, L. H. (The Electrochemical Society, Princeton, NJ, 1975), pp. 589–599.Google Scholar
3.DuBolt, H. E., Krukonis, V. J., Neff, R. M., and Wawner, F. E., in Materials Review for ‘72, pp. 1013–1220.Google Scholar
4.Lackey, W. J., Hanigofsky, J. A., Freeman, G. B., Hardin, R., and Prasad, A., J. Am. Ceram. Soc. 78 (6), 1564–1570 (1995).CrossRefGoogle Scholar
5.Schlichting, J., Powder Metal. Int. 12, 141–147 (1980).Google Scholar
6.Schlichting, J., Powder Metal. Int. 12, 196–200 (1980).Google Scholar
7.Gao, F. and Lin, R. Y., in Metal-Organic Chemical Vapor Deposition of Electronic Ceramics, edited by Desu, S. B., Beach, D. B., and Wessels, B. W. (Mater. Res. Soc. Symp. Proc. 335, Pittsburgh, PA, 1994), pp. 177–182.Google Scholar
8.Besmann, T. M., Sheldon, B. W., Moss, T. S., and Kaster, M. D., J. Am. Ceram. Soc. 75, 2899–2903 (1992).CrossRefGoogle Scholar
9.Allendorf, M. D. and Outka, D. A., in Chemical Perspectives of Microelectronic Materials III, edited by Abernathy, C. R., Bates, C. W., Bohling, D. A., and Hobson, W. S. (Mater. Res. Soc. Symp. Proc. 282, Pittsburgh, PA, 1993), pp. 439–444.Google Scholar
10.Papasouliotis, G. D. and Sotirchos, S. V., in Gas-Phase and Surface Chemistry in Electronic Materials Processing, edited by Mountziaris, T. J., Paz-Pujalt, G. R., Smith, F. T. J., and Westmoreland, P. R. (Mater. Res. Soc. Symp. Proc. 334, Pittsburgh, PA, 1994), pp. 111–116.Google Scholar
11.Tsai, C. Y., Desu, S. B., and Chiu, C. C., J. Mater. Res. 9, 104–111 (1994).CrossRefGoogle Scholar
12.So, M. G. and Chun, J. S., J. Vac. Sci. Technol. A6, 5–8 (1988).CrossRefGoogle Scholar
13.Alam, M. K. and Puneet, V., Thin Film Heat Transfer: Properties and Processing 184, 99–106 (1991).Google Scholar
14.Chu, C. H. and Hon, M. H., Scripta Metall. et Mater. 28, 179–183 (1993).CrossRefGoogle Scholar
15.Minato, K. and Fukuda, K., J. Nucl. Mater. 149, 233–246 (1987).CrossRefGoogle Scholar
16.Loumagne, F., Langlais, F., and Naslain, R., J. de Phys. IV 3, 527–533 (1993).Google Scholar
17.van den Brekel, C. H. J., Philips Res. Repts. 32, 118–133 (1977).Google Scholar
18.Jensen, K. F., in Proceedings of the Ninth International Conference on Chemical Vapor Deposition, edited by Robinson, McD., van den Brekel, C. H. J., Cullen, G. W., Blocher, J. M., Jr. and Rai-Choudhury, P. (The Electrochemical Society, Pennington, NJ, 1984), pp. 3–20.Google Scholar
19.Lee, W. Y., Lackey, W. J., and Agrawal, P. K., J. Am. Ceram. Soc. 74, 2642–2648 (1991).CrossRefGoogle Scholar
20.Colburn, A. P., Trans. A.I.Ch.E. J. 2, 174–210 (1933).Google Scholar
21.Chilton, T. H. and Colburn, A. P., Ind. Eng. Chem. 26, 1183 (1934).CrossRefGoogle Scholar
22.Skelland, A. H. P., in Diffusional Mass Transfer (Robert E. Kreiger Publishing Co., Malabar, FL, 1974), pp. 264–290.Google Scholar
23.Reid, R. C., Prausnitz, J. M., and Poling, B. E., in The Properties of Liquids and Gases (McGraw-Hill Publications, New York, 1986), pp. 388–395 and 577–586.Google Scholar
24.Besmann, T. M., “SOLGASMIX-PV, A Computer Program to Calculate Equilibrium Relationships in Complex Chemical Systems,” ORNL/TM-5775, Oak Ridge National Laboratory, Oak Ridge, TN, April, 1977.CrossRefGoogle Scholar