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Magnetic-field induced anisotropy in electromigration behavior of Sn–Ag–Cu solder interconnects

Published online by Cambridge University Press:  13 April 2015

Jian-Qiang Chen
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Jing-Dong Guo*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Hui-Cai Ma
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Kai-Lang Liu
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Qing-sheng Zhu
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
Jian Ku Shang*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; and Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
*
a)Address all correspondence to this author. e-mail: [email protected]; [email protected]
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Abstract

Sn–Ag–Cu solder interconnects were made by solidifying the solder balls in a magnetic field and subsequently tested for their electromigration behavior. The orientation of the tin grains was analyzed by electron backscattered diffraction. It was found that the c-axis of Sn grain tended to rotate away from the direction of the magnetic field during solidification, resulting in an enhanced electromigration resistance for the solder joint when the current was applied along the direction of the magnetic field, as evidenced by a smaller electromigration-induced polarity effect in the growth of the interfacial intermetallic compound. Such a reduced polarity-effect of electromigration is shown to agree well with the anisotropy in the diffusivity of the active diffusion species, Cu, in the tetragonal Sn. The difference of free energy change caused by the anisotropy in the magnetic susceptibility of the tetragonal Sn during solidification is suggested to be the main factor for this phenomenon.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Tu, K.N.: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 54515473 (2003).Google Scholar
Liang, S.W., Chen, C., Han, J.K., Xu, L.H., Tu, K.N., and Lai, Y.S.: Blocking hillock and whisker growth by intermetallic compound formation in Sn-0.7Cu flip chip solder joints under electromigration. J. Appl. Phys. 107, 093715 (2010).Google Scholar
Guo, F., Xu, G.C., He, H.W., Zhao, M.K., Sun, J., and Wang, C.H.: Effect of electromigration and isothermal aging on the formation of metal whiskers and hillocks in eutectic Sn-Bi solder joints and reaction films. J. Electron. Mater. 38, 26472658 (2009).Google Scholar
Boettinger, W.J., Johnson, C.E., Bendersky, L.A., Moon, K.W., Williams, M.E., and Stafford, G.R.: Whisker and hillock formation on Sn, Sn–Cu and Sn–Pb electrodeposits. Acta Mater. 53, 50335050 (2005).CrossRefGoogle Scholar
Yang, Q.L. and Shang, J.K.: Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect. J. Electron. Mater. 34, 13631367 (2005).CrossRefGoogle Scholar
Zhang, X.F., Guo, J.D., and Shang, J.K.: Abnormal polarity effect of electromigration on intermetallic compound formation in Sn–9Zn solder interconnect. Scr. Mater. 57(6), 513516 (2007).CrossRefGoogle Scholar
Gan, H. and Tu, K.N.: Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples. J. Appl. Phys. 97, 063514 (2005).CrossRefGoogle Scholar
Hsu, Y.C., Chou, C.K., Liu, P.C., Chen, C., Yao, D.J., Chou, T., and Tu, K.N.: Electromigration in Pb-free SnAg3.8Cu0.7 solder stripes. J. Appl. Phys. 98, 033523 (2005).Google Scholar
Zhu, Q.S., Liu, H.Y., Zhang, L., Wang, Z.G., and Shang, J.K.: Surface morphology of Sn-rich solder interconnects after electrical loading. J. Electron. Mater. 41, 741747 (2012).Google Scholar
Ren, F., Nah, J.W., Tu, K.N., Xiong, B.S., Xu, L.H., and Pang, J.H.L.: Electromigration induced ductile-to-brittle transition in lead-free solder joints. Appl. Phys. Lett. 89, 141911141914 (2006).Google Scholar
Ho, C.E., Lee, A., and Subramanian, K.N.: Design of solder joints for fundamental studies on the effects of electromigration. J. Mater. Sci.: Mater. Electron. 18, 569574 (2007).Google Scholar
Lienig, J.: Electromigration and its impact on physical design in future technologies. In Proceedings of the 2013 ACM International Symposium on Physical Design (ACM, New York, NY, 2013); pp. 3340.CrossRefGoogle Scholar
Chen, C. and Huang, C.: Effects of silver doping on electromigration of eutectic SnBi solder. J. Alloys Compd. 461, 235241 (2008).Google Scholar
Chen, C.M., Huang, C.C., Liao, C.N., and Liou, K.M.: Effects of Cu doping on the microstructural evolution in the eutectic SnBi solder stripes under annealing and current stressing. J. Electron. Mater. 36, 760765 (2007).Google Scholar
Lu, M., Shih, D.Y., Kang, S.K., Goldsmith, C., and Flaitzb, P.: Effect of Zn doping on SnAg solder microstructure and electromigration stability. J. Appl. Phys. 106(5), 053509 (2009).Google Scholar
Kumar, A., He, M., and Chen, Z.: Barrier properties of thin Au/Ni–P under bump metallization for Sn–3.5Ag solder. Surf. Coat. Technol. 198, 283286 (2005).Google Scholar
Dyson, B.F.: Diffusion of gold and silver in tin single crystals. J. Appl. Phys. 37, 23752377 (1966).Google Scholar
Dyson, B.F., Anthony, T.R., and Turnbull, D.J.: Interstitial diffusion of copper in tin. J. Appl. Phys. 38, 3408 (1967).Google Scholar
Huang, F.H. and Huntington, H.B.: Diffusion of Sb124, Cd109, Sn113, and Zn65 in tin. Phys. Rev. B. 9, 14791488 (1974).CrossRefGoogle Scholar
Yeh, D.C. and Huntington, H.B.: Extreme fast-diffusion system: Nickel in single-crystal tin. Phys. Rev. Lett. 53, 14691472 (1984).CrossRefGoogle Scholar
Lu, M.H., Shih, D.Y., Lauro, P., Goldsmith, C., and Henderson, D.W.: Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders. Appl. Phys. Lett. 92, 211909 (2008).CrossRefGoogle Scholar
Wang, Y.W., Lu, K.H., Gupta, V., Stiborek, L., Shirley, D., Chae, S-H., Im, J., and Ho, P.S.: Effects of Sn grain structure on the electromigration of Sn–Ag solder joints. J. Mater. Res. 27, 11311141 (2012).Google Scholar
Huang, T.C., Yang, T.L., Ke, J.H., Hsueh, C.H., and Kao, C.R.: Effects of Sn grain orientation on substrate dissolution and intermetallic precipitation in solder joints under electron current stressing. Scr. Mater. 80, 3740 (2014).CrossRefGoogle Scholar
Ho, C.E., Yang, C.H., and Hsu, L.H.: Electromigration in thin-film solder joints. Surf. Coat. Technol. 259, 257261 (2005).CrossRefGoogle Scholar
Chen, J.Q., Guo, J.D., Liu, K.L., and Shang, J.K.: Dependence of electromigration damage on Sn grain orientation in Sn–Ag–Cu solder joints. J. Appl. Phys. 114, 153509 (2013).CrossRefGoogle Scholar
Li, S., Wu, C., Sassa, K., and Asai, S.: The control of crystal orientation in ceramics by imposition of a high magnetic field. Mater. Sci. Eng., A 422, 227231 (2006).Google Scholar
Legrand, B.A., Chateigner, D., Perrier de la Bathie, R., and Tournier, R.: Orientation by solidification in a magnetic field: A new process to texture SmCo compounds used as permanent magnets. J. Magn. Magn. Mater. 173, 2028 (1997).CrossRefGoogle Scholar
Tahashi, M., Ishihara, M., Sassa, K., and Asai, S.: Control of crystal orientation in deposited films of bismuth vaporized in laser and resistance heating methods under a high magnetic field. Mater. Trans. JIM 41, 985990 (2000).Google Scholar
Asai, S., Sassa, K-s., and Tahashi, M.: Crystal orientation of non-magnetic materials by imposition of a high magnetic field. Sci. Technol. Adv. Mater. 4, 455460 (2003).CrossRefGoogle Scholar
Schaich, W.L.: Theory of the driving force of electromigration: weak-charge solutions. Phys. Rev. B 13, 33503359 (1976).Google Scholar
Huntington, H.B. and Grone, A.R.: Current-induced marker motion in gold wires. J. Phys. Chem. Solids 20, 7687 (1961).CrossRefGoogle Scholar