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Low-temperature Crystallization of SrBi2Ta2O9 Thin Filmswith Bi2O3 Interfacial Layers by Liquid-delivery Metalorganicchemical Vapor Deposition

Published online by Cambridge University Press:  31 January 2011

Woong-Chul Shin ,
Kyu-Jeong Choi  and
Soon-Gil Yoon
Woong-Chul Shin
Affiliation:
Department of Materials Engineering, Chungnam National University, Daeduk Science Town,Taejon, 305–764, Korea
Kyu-Jeong Choi
Affiliation:
Department of Materials Engineering, Chungnam National University, Daeduk Science Town,Taejon, 305–764, Korea
Soon-Gil Yoon
Affiliation:
Department of Materials Engineering, Chungnam National University, Daeduk Science Town,Taejon, 305–764, Korea
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Abstract

Ferroelectric SrBi2Ta2O9 (SBT) thin films and Bi2O3 interfacial layers were depositedonto the Pt/Ti/SiO2/Si substrates via liquid-delivery metalorganic chemical vapordeposition. The SBT films with a 5-nm-thick Bi2O3 interfacial layer were well crystallized without c-axis orientation, even at deposition temperature of 540 °C and showed a stronger (115) orientation than those without a Bi2O3 layer with increasing annealing temperature. The remanent polarizations of SBT films with Bi2O3 interfacial layer were significantly improved in comparison with those without Bi2O3 layer. The remanent polarization (2Pr) and coercive field (Ec) of SBT films without and with aBi2O3 interfacial layer annealed at 750 °C were 12 and 21 μC/cm2 and 60 and38 kV/cm, respectively, at an applied voltage of 5 V.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 1 , January 2002 , pp. 26 - 30
Copyright
Copyright © Materials Research Society 2002

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