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Low temperature sintering of nano-SiC using a novel Al8B4C7 additive

Published online by Cambridge University Press:  31 January 2011

Sea-Hoon Lee ,
Byung-Nam Kim  and
Hidehiko Tanaka
Sea-Hoon Lee*
Affiliation:
Korea Institute of Materials Science, Changwon, Gyeongnam, 641-831 Republic of Korea
Byung-Nam Kim
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki, 305-0047 Japan
Hidehiko Tanaka
Affiliation:
National Institute for Materials Science, Tsukuba, Ibaraki, 305-0044 Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Al8B4C7 was used as a sintering additive for the densification of nano-SiC powder. The average grain size was approximately 70 nm after sintering SiC-12.5wt% Al8B4C7 at 1550 °C. The densification rate strongly depended on the sintering temperature and the applied pressure. The rearrangement of SiC particles occurred at the initial shrinkage, while viscous flow and liquid phase sintering became important at the middle and final stage of densification.

Keywords

CeramicNanostructureSintering
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 3 , March 2010 , pp. 471 - 475
Copyright
Copyright © Materials Research Society 2010

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