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Low temperature growth and reliability of ferroelectric memory cell integrated on Si with conducting barrier stack

Published online by Cambridge University Press:  31 January 2011

A. M. Dhote ,
S. Madhukar ,
D. Young ,
T. Venkatesan ,
R. Ramesh ,
C. M. Cotell  and
Joseph M. Benedetto
A. M. Dhote
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
S. Madhukar
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
D. Young
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
T. Venkatesan
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
R. Ramesh
Affiliation:
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
C. M. Cotell
Affiliation:
Surface Modification Branch, U.S. Naval Research Laboratory, Washington, DC 20375
Joseph M. Benedetto
Affiliation:
Army Research Laboratories, Adelphi, Maryland 20783
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Abstract

Polycrystalline LSCO/PNZT/LSCO ferroelectric capacitor heterostructures were grown by pulsed laser deposition using a composite conducting barrier layer of Pt/TiN on poly-Si/Si substrate. The growth of the ferroelectric heterostructure is accomplished at a temperature in the range of 500–600 °C. This integration results in a 3-dimensional stacked capacitor-transistor geometry which is important for high density nonvolatile memory (HDNVM) applications. Transmission electron microscopy shows smooth substrate-film and film-film interfaces without any perceptible interdiffusion. The ferroelectric properties and reliability of these integrated capacitors were studied extensively at room temperature and 100 °C for different growth temperatures. The capacitors exhibit excellent reliability, both at room temperature and at elevated temperatures, making them very desirable for HDNVM applications.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 6 , June 1997 , pp. 1589 - 1594
Copyright
Copyright © Materials Research Society 1997

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