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Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni–Zr

Published online by Cambridge University Press:  31 January 2011

R. de Reus ,
H. C. Tissink  and
F. W. Saris
R. de Reus
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
H. C. Tissink
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
F. W. Saris
Affiliation:
FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
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Abstract

Although amorphous alloys are known to be good diffusion barriers, amorphous nickel-zirconium is shown to react with Si at relatively low temperatures. Diffusion of Ni at 350°C through an amorphous Ni–Zr buffer layer leads to the formation of epitaxial NiSi2 on single crystal silicon substrates. Interplay of mobility and thermodynamics is applicable for epitaxial silicide nucleation and growth. Also, a one-step annealing process in oxygen ambient leads to bilayer formation of NiSi2/ZrO2 structures on silicon substrates.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 2 , February 1990 , pp. 341 - 346
Copyright
Copyright © Materials Research Society 1990

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References

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